SPW20N60CFD Datasheet and Replacement
Type Designator: SPW20N60CFD
Marking Code: 20N60CFD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 20.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 95 nC
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 780 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
Package: TO247
SPW20N60CFD substitution
SPW20N60CFD Datasheet (PDF)
spw20n60cfd.pdf

Please note the new package dimensions arccording to PCN 20091 4APlease note the new package dimensions arccording to PCN 20091 4APlease note the new package dimensions arccording to PCN 20091 4APlease note the new package dimensions arccording to PCN 20091 4APlease note the new package dimensions arccording to PCN 20091 4APlease note the new package
spw20n60cfd.pdf

isc N-Channel MOSFET Transistor SPW20N60CFD, ISPW20N60CFDFEATURESStatic drain-source on-resistance:RDS(on)220mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
spw20n60c3.pdf

isc N-Channel MOSFET Transistor SPW20N60C3 ISPW20N60C3FEATURESStatic drain-source on-resistance:RDS(on)190mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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