All MOSFET. SPW21N50C3 Datasheet

 

SPW21N50C3 Datasheet and Replacement


   Type Designator: SPW21N50C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO247
 

 SPW21N50C3 substitution

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SPW21N50C3 Datasheet (PDF)

 ..1. Size:761K  infineon
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SPW21N50C3

VDS Tjmax G G

 ..2. Size:244K  inchange semiconductor
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SPW21N50C3

isc N-Channel MOSFET Transistor SPW21N50C3ISPW21N50C3FEATURESStatic drain-source on-resistance:RDS(on)190mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved TransconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 50

Datasheet: SPW12N50C3 , SPW15N60C3 , SPW15N60CFD , SPW16N50C3 , SPW17N80C3 , SPW20N60C3 , SPW20N60CFD , SPW20N60S5 , STP65NF06 , SPW24N60C3 , SPW24N60CFD , SPW32N50C3 , SPW35N60C3 , SPW35N60CFD , SPW47N60C3 , SPW47N60CFD , SPW47N65C3 .

History: IRFP1405

Keywords - SPW21N50C3 MOSFET datasheet

 SPW21N50C3 cross reference
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