SPW24N60C3 PDF and Equivalents Search

 ..1. Size:807K  infineon
 spw24n60c3.pdf

SPW24N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.16 New revolutionary high voltage technology ID 24.3 A Ultra low gate charge PG-TO247 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPW24N60C3 PG-TO247 Q67040-S4640 24N60C3 Maximum Rati... See More ⇒

 ..2. Size:244K  inchange semiconductor
 spw24n60c3.pdf

isc N-Channel MOSFET Transistor SPW24N60C3 ISPW24N60C3 FEATURES Static drain-source on-resistance RDS(on) 160m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage... See More ⇒

 5.1. Size:678K  infineon
 spw24n60cfd.pdf

SPW24N60CFD TM C IMOSTM "9@/; %;+877+;B Features V 1?B6M 650 V !0 V &CIG>CH>8 ;6HI G 8DK GN 7D9N 9>D9 R 0.185 DS(on) max V "MIG B AN ADL G K GH G 8DK GN 8=6G;> 9 688DG9>CC... See More ⇒

 5.2. Size:244K  inchange semiconductor
 spw24n60cfd.pdf

isc N-Channel MOSFET Transistor SPW24N60CFD ISPW24N60CFD FEATURES Static drain-source on-resistance RDS(on) 185m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta... See More ⇒