IRF1010EZ PDF and Equivalents Search

 

IRF1010EZ Specs and Replacement

Type Designator: IRF1010EZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 84 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 420 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO220AB

IRF1010EZ substitution

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IRF1010EZ datasheet

 ..1. Size:407K  international rectifier
irf1010ezpbf irf1010ezspbf irf1010ezlpbf.pdf pdf_icon

IRF1010EZ

PD - 95483C IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 8.5m Lead-Free G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing tech... See More ⇒

 ..2. Size:407K  international rectifier
irf1010ezlpbf irf1010ezpbf irf1010ezspbf.pdf pdf_icon

IRF1010EZ

PD - 95483C IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 8.5m Lead-Free G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing tech... See More ⇒

 ..3. Size:245K  inchange semiconductor
irf1010ez.pdf pdf_icon

IRF1010EZ

isc N-Channel MOSFET Transistor IRF1010EZ IIRF1010EZ FEATURES Static drain-source on-resistance RDS(on) 8.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒

 0.1. Size:375K  international rectifier
auirf1010ezstrl.pdf pdf_icon

IRF1010EZ

PD - 95962 AUTOMOTIVE GRADE AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D V(BR)DSS 60V 175 C Operating Temperature Fast Switching RDS(on) max. 8.5m Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 84A Lead-Free, RoHS Compliant S Automotive Qualified * ID (Package Limited)... See More ⇒

Detailed specifications: SPW24N60CFD , SPW32N50C3 , SPW35N60C3 , SPW35N60CFD , SPW47N60C3 , SPW47N60CFD , SPW47N65C3 , SPW52N50C3 , IRF840 , IRF1010EZL , IRF1010EZS , IRF1010Z , IRF1010ZL , IRF1010ZS , IRF1018E , IRF1018ES , IRF1018ESL .

History: IRF9393PBF | IRF9392PBF

Keywords - IRF1010EZ MOSFET specs

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