IRF1010EZ Specs and Replacement
Type Designator: IRF1010EZ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 84 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 420 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO220AB
IRF1010EZ substitution
- MOSFET ⓘ Cross-Reference Search
IRF1010EZ datasheet
irf1010ezpbf irf1010ezspbf irf1010ezlpbf.pdf
PD - 95483C IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 8.5m Lead-Free G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing tech... See More ⇒
irf1010ezlpbf irf1010ezpbf irf1010ezspbf.pdf
PD - 95483C IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 8.5m Lead-Free G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing tech... See More ⇒
irf1010ez.pdf
isc N-Channel MOSFET Transistor IRF1010EZ IIRF1010EZ FEATURES Static drain-source on-resistance RDS(on) 8.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒
auirf1010ezstrl.pdf
PD - 95962 AUTOMOTIVE GRADE AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D V(BR)DSS 60V 175 C Operating Temperature Fast Switching RDS(on) max. 8.5m Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 84A Lead-Free, RoHS Compliant S Automotive Qualified * ID (Package Limited)... See More ⇒
Detailed specifications: SPW24N60CFD , SPW32N50C3 , SPW35N60C3 , SPW35N60CFD , SPW47N60C3 , SPW47N60CFD , SPW47N65C3 , SPW52N50C3 , IRF840 , IRF1010EZL , IRF1010EZS , IRF1010Z , IRF1010ZL , IRF1010ZS , IRF1018E , IRF1018ES , IRF1018ESL .
History: IRF9393PBF | IRF9392PBF
Keywords - IRF1010EZ MOSFET specs
IRF1010EZ cross reference
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IRF1010EZ replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IRF9393PBF | IRF9392PBF
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