All MOSFET. IRF1018ES Datasheet

 

IRF1018ES MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF1018ES

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 110 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 79 A

Maximum Junction Temperature (Tj): 175 ┬░C

Maximum Drain-Source On-State Resistance (Rds): 0.0084 Ohm

Package: D2PAK

IRF1018ES Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF1018ES Datasheet (PDF)

4.1. irf1010n.pdf Size:211K _international_rectifier

IRF1018ES
IRF1018ES

PD - 91278 IRF1010N HEXFET« Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 11m? G Fast Switching Fully Avalanche Rated ID = 85A S Description Advanced HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

4.2. irf1010e.pdf Size:195K _international_rectifier

IRF1018ES
IRF1018ES

PD - 91670 IRF1010E HEXFET« Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 12m? G Fast Switching Fully Avalanche Rated ID = 84A S Description Advanced HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

 4.3. irf1010esl.pdf Size:196K _international_rectifier

IRF1018ES
IRF1018ES

PD - 9.1720 IRF1010ES/L HEXFET« Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175░C Operating Temperature RDS(on) = 0.012? G Fast Switching Fully Avalanche Rated ID = 83A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on

4.4. irf1010z.pdf Size:180K _international_rectifier

IRF1018ES
IRF1018ES

PD - 94652 AUTOMOTIVE MOSFET IRF1010Z HEXFET« Power MOSFET Features D ? Advanced Process Technology VDSS = 55V ? Ultra Low On-Resistance ? 175░C Operating Temperature RDS(on) = 7.5m? ? Fast Switching G ? Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET« Power MOSFET utilizes the latest processing techni

 4.5. irf1010ns.pdf Size:146K _international_rectifier

IRF1018ES
IRF1018ES

PD - 94171 IRF1010NS IRF1010NL Advanced Process Technology HEXFET« Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 55V 175░C Operating Temperature Fast Switching RDS(on) = 11m? Fully Avalanche Rated G Description Advanced HEXFET« Power MOSFETs from ID = 85A International Rectifier utilize advanced processing S techniques to achieve extremely low on-resis

4.6. irf1010es.pdf Size:123K _international_rectifier

IRF1018ES
IRF1018ES

PD - 91720 IRF1010ES IRF1010EL Advanced Process Technology HEXFET« Power MOSFET Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) D 175░C Operating Temperature VDSS = 60V Fast Switching Fully Avalanche Rated RDS(on) = 12m? G Description Advanced HEXFET« Power MOSFETs from International ID = 84A Rectifier utilize advanced processing techniques to S achieve extr

Datasheet: SPW52N50C3 , IRF1010EZ , IRF1010EZL , IRF1010EZS , IRF1010Z , IRF1010ZL , IRF1010ZS , IRF1018E , IRF630 , IRF1018ESL , IRF1104L , IRF1104S , IRF1324 , IRF1324L , IRF1324S , IRF1324S-7P , IRF1404L .

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