IRF1018ES PDF and Equivalents Search

 

IRF1018ES Specs and Replacement

Type Designator: IRF1018ES

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 79 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm

Package: TO263

IRF1018ES substitution

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IRF1018ES datasheet

 ..1. Size:429K  international rectifier
irf1018epbf irf1018eslpbf irf1018espbf.pdf pdf_icon

IRF1018ES

PD - 97125 IRF1018EPbF IRF1018ESPbF IRF1018ESLPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in D SMPS VDSS 60V l Uninterruptible Power Supply RDS(on) typ. 7.1m l High Speed Power Switching l Hard Switched and High Frequency Circuits G max. 8.4m ID 79A S Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D D D l ... See More ⇒

 ..2. Size:429K  international rectifier
irf1018epbf irf1018espbf irf1018eslpbf.pdf pdf_icon

IRF1018ES

PD - 97125 IRF1018EPbF IRF1018ESPbF IRF1018ESLPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in D SMPS VDSS 60V l Uninterruptible Power Supply RDS(on) typ. 7.1m l High Speed Power Switching l Hard Switched and High Frequency Circuits G max. 8.4m ID 79A S Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D D D l ... See More ⇒

 ..3. Size:258K  inchange semiconductor
irf1018es.pdf pdf_icon

IRF1018ES

Isc N-Channel MOSFET Transistor IRF1018ES FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol... See More ⇒

 0.1. Size:658K  infineon
auirf1018es.pdf pdf_icon

IRF1018ES

AUTOMOTIVE GRADE AUIRF1018ES HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. Ultra Low On-Resistance 7.1m 175 C Operating Temperature max. 8.4m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 79A Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed fo... See More ⇒

Detailed specifications: SPW52N50C3, IRF1010EZ, IRF1010EZL, IRF1010EZS, IRF1010Z, IRF1010ZL, IRF1010ZS, IRF1018E, IRF640, IRF1018ESL, IRF1104L, IRF1104S, IRF1324, IRF1324L, IRF1324S, IRF1324S-7P, IRF1404L

Keywords - IRF1018ES MOSFET specs

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