IRF1018ESL MOSFET. Datasheet pdf. Equivalent

IRF1018ESL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF1018ESL Datasheet (PDF)

1.1. irf1018epbf irf1018eslpbf irf1018espbf.pdf Size:429K _update

PD - 97125 IRF1018EPbF IRF1018ESPbF IRF1018ESLPbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in D SMPS VDSS 60V l Uninterruptible Power Supply RDS(on) typ. 7.1m : l High Speed Power Switching l Hard Switched and High Frequency Circuits G max. 8.4m : ID 79A S Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D D D l

4.1. irf1010a irf1010h.pdf Size:606K _update

RoHS IRF1010 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (84A, 60Volts) DESCRIPTION The Nell IRF1010 is a three-terminal silicon device with current conduction capability D D of 84A, fast switching speed, low on-state resistance, breakdown voltage rating of 60V, and max. threshold voltage of 4 volts. They are designed as an extremely efficient G

4.2. irf1010ezlpbf irf1010ezpbf irf1010ezspbf.pdf Size:407K _update

PD - 95483C IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF Features Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 8.5mΩ Lead-Free G ID = 75A Description S This HEXFET® Power MOSFET utilizes the latest processing tech

 4.3. irf1010zlpbf irf1010zpbf irf1010zspbf.pdf Size:399K _update

PD - 95361A IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF Features l Advanced Process Technology HEXFET® Power MOSFET l Ultra Low On-Resistance l 175°C Operating Temperature D l Fast Switching VDSS = 55V l Repetitive Avalanche Allowed up to Tjmax l Lead-Free RDS(on) = 7.5mΩ G Description ID = 75A This HEXFET® Power MOSFET utilizes the latest S processing techniques to achieve extr

4.4. irf1010nlpbf irf1010nspbf.pdf Size:292K _update

PD - 95103 IRF1010NSPbF IRF1010NLPbF l Advanced Process Technology l Ultra Low On-Resistance HEXFET Power MOSFET l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = 55V l Fast Switching l Fully Avalanche Rated RDS(on) = 11mΩ l Lead-Free G Description ID = 85A‡ Advanced HEXFET Power MOSFETs from S International Rectifier utilize advanced processing techniques t

 4.5. irf1010elpbf irf1010espbf.pdf Size:222K _update

PD - 95444 IRF1010ESPbF IRF1010ELPbF l Advanced Process Technology l Surface Mount (IRF1010ES) HEXFET® Power MOSFET l Low-profile through-hole (IRF1010EL) D l 175°C Operating Temperature VDSS = 60V l Fast Switching l Fully Avalanche Rated RDS(on) = 12mΩ l Lead-Free G Description Advanced HEXFET® Power MOSFETs from International ID = 84A‡ S Rectifier utilize advanced pro

4.6. irf1010npbf.pdf Size:225K _update

PD - 94966A IRF1010NPbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 11mΩ l Fast Switching G l Fully Avalanche Rated ID = 85A‡ l Lead-Free S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

4.7. irf1010epbf.pdf Size:241K _update

PD - 94965B IRF1010EPbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 60V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 12mΩ l Fast Switching G l Fully Avalanche Rated ID = 84A‡ l Lead-Free S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

4.8. irf1010n.pdf Size:211K _international_rectifier

PD - 91278 IRF1010N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 11m? G Fast Switching Fully Avalanche Rated ID = 85A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

4.9. irf1010e.pdf Size:195K _international_rectifier

PD - 91670 IRF1010E HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 12m? G Fast Switching Fully Avalanche Rated ID = 84A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

4.10. irf1010esl.pdf Size:196K _international_rectifier

PD - 9.1720 IRF1010ES/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature RDS(on) = 0.012? G Fast Switching Fully Avalanche Rated ID = 83A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on

4.11. irf1010z.pdf Size:180K _international_rectifier

PD - 94652 AUTOMOTIVE MOSFET IRF1010Z HEXFET® Power MOSFET Features D ? Advanced Process Technology VDSS = 55V ? Ultra Low On-Resistance ? 175°C Operating Temperature RDS(on) = 7.5m? ? Fast Switching G ? Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techni

4.12. irf1010ns.pdf Size:146K _international_rectifier

PD - 94171 IRF1010NS IRF1010NL Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 55V 175°C Operating Temperature Fast Switching RDS(on) = 11m? Fully Avalanche Rated G Description Advanced HEXFET® Power MOSFETs from ID = 85A International Rectifier utilize advanced processing S techniques to achieve extremely low on-resis

4.13. irf1010es.pdf Size:123K _international_rectifier

PD - 91720 IRF1010ES IRF1010EL Advanced Process Technology HEXFET® Power MOSFET Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) D 175°C Operating Temperature VDSS = 60V Fast Switching Fully Avalanche Rated RDS(on) = 12m? G Description Advanced HEXFET® Power MOSFETs from International ID = 84A Rectifier utilize advanced processing techniques to S achieve extr

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