IRF1018ESL MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF1018ESL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 110 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 79 A
Maximum Drain-Source On-State Resistance (Rds): 0.0084 Ohm
Package: TO262
IRF1018ESL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF1018ESL Datasheet (PDF)
4.1. irf1010n.pdf 
Size:211K _international_rectifier
PD - 91278 IRF1010N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 11m? G Fast Switching Fully Avalanche Rated ID = 85A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s
4.2. irf1010e.pdf Size:195K _international_rectifier
PD - 91670 IRF1010E HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 12m? G Fast Switching Fully Avalanche Rated ID = 84A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s
4.3. irf1010esl.pdf Size:196K _international_rectifier
PD - 9.1720 IRF1010ES/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature RDS(on) = 0.012? G Fast Switching Fully Avalanche Rated ID = 83A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on
4.4. irf1010z.pdf Size:180K _international_rectifier
PD - 94652 AUTOMOTIVE MOSFET IRF1010Z HEXFET® Power MOSFET Features D ? Advanced Process Technology VDSS = 55V ? Ultra Low On-Resistance ? 175°C Operating Temperature RDS(on) = 7.5m? ? Fast Switching G ? Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techni
4.5. irf1010ns.pdf Size:146K _international_rectifier
PD - 94171 IRF1010NS IRF1010NL Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 55V 175°C Operating Temperature Fast Switching RDS(on) = 11m? Fully Avalanche Rated G Description Advanced HEXFET® Power MOSFETs from ID = 85A International Rectifier utilize advanced processing S techniques to achieve extremely low on-resis
4.6. irf1010es.pdf Size:123K _international_rectifier
PD - 91720 IRF1010ES IRF1010EL Advanced Process Technology HEXFET® Power MOSFET Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) D 175°C Operating Temperature VDSS = 60V Fast Switching Fully Avalanche Rated RDS(on) = 12m? G Description Advanced HEXFET® Power MOSFETs from International ID = 84A Rectifier utilize advanced processing techniques to S achieve extr
Datasheet: IRF1010EZ , IRF1010EZL , IRF1010EZS , IRF1010Z , IRF1010ZL , IRF1010ZS , IRF1018E , IRF1018ES , IRFP460 , IRF1104L , IRF1104S , IRF1324 , IRF1324L , IRF1324S , IRF1324S-7P , IRF1404L , IRF1404S .
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