All MOSFET. IRF1404S Datasheet

 

IRF1404S MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF1404S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 200 W
   Maximum Drain-Source Voltage |Vds|: 40 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 162 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 160 nC
   Rise Time (tr): 140 nS
   Drain-Source Capacitance (Cd): 1680 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.004 Ohm
   Package: TO263

 IRF1404S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF1404S Datasheet (PDF)

 ..1. Size:139K  international rectifier
irf1404s.pdf

IRF1404S IRF1404S

PD -93853BIRF1404SIRF1404LHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.004 Fast SwitchingG Fully Avalanche RatedID = 162A DescriptionSSeventh Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve ex

 ..2. Size:274K  international rectifier
irf1404lpbf irf1404spbf.pdf

IRF1404S IRF1404S

PD -95104IRF1404SPbFIRF1404LPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDl 175C Operating Temperature VDSS = 40Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.004Gl Lead-FreeID = 162ADescriptionSSeventh Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtec

 ..3. Size:274K  infineon
irf1404spbf.pdf

IRF1404S IRF1404S

PD -95104IRF1404SPbFIRF1404LPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDl 175C Operating Temperature VDSS = 40Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.004Gl Lead-FreeID = 162ADescriptionSSeventh Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtec

 ..4. Size:252K  inchange semiconductor
irf1404s.pdf

IRF1404S IRF1404S

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1404SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM

 0.1. Size:303K  infineon
auirf1404s auirf1404l.pdf

IRF1404S IRF1404S

AUIRF1404S AUTOMOTIVE GRADE AUIRF1404L HEXFET Power MOSFET Features Advanced Planar Technology VDSS 40V Dynamic dv/dt Rating RDS(on) typ. 3.5m 175C Operating Temperature max. 4.0m Fast Switching ID (Silicon Limited) 162A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-F

 7.1. Size:107K  international rectifier
irf1404.pdf

IRF1404S IRF1404S

PD -91896EIRF1404HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.004 Fast SwitchingG Fully Avalanche RatedID = 162A SDescriptionSeventh Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low

 7.2. Size:286K  international rectifier
irf1404zgpbf.pdf

IRF1404S IRF1404S

PD - 96236AIRF1404ZGPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 40Vl Fast Switchingl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeRDS(on) = 3.7ml Halogen-Free GDescription ID = 75ASThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low

 7.3. Size:306K  international rectifier
irf1404l.pdf

IRF1404S IRF1404S

PD -93853CIRF1404SIRF1404LHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.004 Fast SwitchingG Fully Avalanche RatedID = 162A DescriptionSSeventh Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve ex

 7.4. Size:362K  international rectifier
auirf1404zstrl.pdf

IRF1404S IRF1404S

PD - 97460AUTOMOTIVE GRADEAUIRF1404ZAUIRF1404ZSAUIRF1404ZLFeatures Advanced Process TechnologyHEXFET Power MOSFET Low On-ResistanceDV(BR)DSS 40V 175C Operating Temperature Fast SwitchingRDS(on) max.3.7m Repetitive Avalanche Allowed up to TjmaxGID (Silicon Limited) Lead-Free, RoHS Compliant 180A Automotive Qualified *SID (Package Limited)160A

 7.5. Size:181K  international rectifier
irf1404z.pdf

IRF1404S IRF1404S

PD - 11371AUTOMOTIVE MOSFETIRF1404ZHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 40V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 3.7m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID = 75ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes the latest

 7.6. Size:298K  international rectifier
irf1404zlpbf irf1404zpbf irf1404zspbf.pdf

IRF1404S IRF1404S

PD - 96040CIRF1404ZPbFIRF1404ZSPbFIRF1404ZLPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel 175C Operating Temperature V(BR)DSS 40VDl Fast SwitchingRDS(on) typ. 2.7ml Repetitive Avalanche Allowed up to Tjmax max. 3.7ml Lead-FreeGID (Silicon Limited) 180A DescriptionID (Package Limited) 120A SThis HEXFET P

 7.7. Size:212K  international rectifier
auirf1404.pdf

IRF1404S IRF1404S

PD-97684AUTOMOTIVE GRADEAUIRF1404FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS40Vl Dynamic dv/dt RatingRDS(on) typ.3.5ml 175C Operating Temperature max 4.0ml Fast SwitchingGID (Silicon Limited)202Al Fully Avalanche RatedSl Repetitive Avalanche AllowedID (Package Limited)160Aup to Tjmaxl Lead-Free

 7.8. Size:204K  international rectifier
irf1404pbf.pdf

IRF1404S IRF1404S

PD-94968BIRF1404PbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 40Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.004l Fully Avalanche RatedGl Lead-FreeID = 202ASDescriptionSeventh Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to

 7.9. Size:208K  infineon
irf1404pbf.pdf

IRF1404S IRF1404S

PD-94968BIRF1404PbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 40Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.004l Fully Avalanche RatedGl Lead-FreeID = 202ASDescriptionSeventh Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to

 7.10. Size:383K  infineon
auirf1404z auirf1404zs auirf1404zl.pdf

IRF1404S IRF1404S

AUIRF1404Z AUIRF1404ZS AUTOMOTIVE GRADE AUIRF1404ZL HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) max. 3.7m 175C Operating Temperature ID (Silicon Limited) 180A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 160A Lead-Free, RoHS Compliant Auto

 7.11. Size:302K  infineon
irf1404zpbf irf1404zspbf irf1404zlpbf.pdf

IRF1404S IRF1404S

PD - 96040CIRF1404ZPbFIRF1404ZSPbFIRF1404ZLPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel 175C Operating Temperature V(BR)DSS 40VDl Fast SwitchingRDS(on) typ. 2.7ml Repetitive Avalanche Allowed up to Tjmax max. 3.7ml Lead-FreeGID (Silicon Limited) 180A DescriptionID (Package Limited) 120A SThis HEXFET P

 7.12. Size:2504K  kexin
irf1404z.pdf

IRF1404S IRF1404S

DIP Type MOSFETN-Channel MOSFETIRF1404Z (KRF1404Z)TO-2209.90 0.20 4.50 0.20(8.70)+0.103.60 0.10 1.30 0.05 Features VDS (V) = 40V ID = 75 A (VGS = 10V) RDS(ON) 3.7m (VGS = 10V) Fast Switching1.27 0.10 1.52 0.10 Repetitive Avalanche Allowed up to Tjmax21 30.80 0.10 +0.100.50 0.05 2.40 0.202.54TYP 2.54T

 7.13. Size:245K  inchange semiconductor
irf1404.pdf

IRF1404S IRF1404S

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1404IIRF1404FEATURESStatic drain-source on-resistance:RDS(on) 4.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

 7.14. Size:258K  inchange semiconductor
irf1404zs.pdf

IRF1404S IRF1404S

Isc N-Channel MOSFET Transistor IRF1404ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

 7.15. Size:245K  inchange semiconductor
irf1404z.pdf

IRF1404S IRF1404S

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1404ZIIRF1404ZFEATURESStatic drain-source on-resistance:RDS(on) 3.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

Datasheet: IRF1018ESL , IRF1104L , IRF1104S , IRF1324 , IRF1324L , IRF1324S , IRF1324S-7P , IRF1404L , 2SK3878 , IRF1404Z , IRF1404ZG , IRF1404ZL , IRF1404ZS , IRF1405 , IRF1405L , IRF1405S , IRF1405Z .

 

 
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