All MOSFET. IRF1404ZL Datasheet

 

IRF1404ZL MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF1404ZL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 200 W
   Maximum Drain-Source Voltage |Vds|: 40 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 180 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 100 nC
   Rise Time (tr): 110 nS
   Drain-Source Capacitance (Cd): 1030 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0037 Ohm
   Package: TO262

 IRF1404ZL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF1404ZL Datasheet (PDF)

 ..1. Size:298K  international rectifier
irf1404zlpbf irf1404zpbf irf1404zspbf.pdf

IRF1404ZL IRF1404ZL

PD - 96040CIRF1404ZPbFIRF1404ZSPbFIRF1404ZLPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel 175C Operating Temperature V(BR)DSS 40VDl Fast SwitchingRDS(on) typ. 2.7ml Repetitive Avalanche Allowed up to Tjmax max. 3.7ml Lead-FreeGID (Silicon Limited) 180A DescriptionID (Package Limited) 120A SThis HEXFET P

 ..2. Size:302K  infineon
irf1404zpbf irf1404zspbf irf1404zlpbf.pdf

IRF1404ZL IRF1404ZL

PD - 96040CIRF1404ZPbFIRF1404ZSPbFIRF1404ZLPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel 175C Operating Temperature V(BR)DSS 40VDl Fast SwitchingRDS(on) typ. 2.7ml Repetitive Avalanche Allowed up to Tjmax max. 3.7ml Lead-FreeGID (Silicon Limited) 180A DescriptionID (Package Limited) 120A SThis HEXFET P

 0.1. Size:383K  infineon
auirf1404z auirf1404zs auirf1404zl.pdf

IRF1404ZL IRF1404ZL

AUIRF1404Z AUIRF1404ZS AUTOMOTIVE GRADE AUIRF1404ZL HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) max. 3.7m 175C Operating Temperature ID (Silicon Limited) 180A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 160A Lead-Free, RoHS Compliant Auto

 6.1. Size:286K  international rectifier
irf1404zgpbf.pdf

IRF1404ZL IRF1404ZL

PD - 96236AIRF1404ZGPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 40Vl Fast Switchingl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeRDS(on) = 3.7ml Halogen-Free GDescription ID = 75ASThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low

 6.2. Size:362K  international rectifier
auirf1404zstrl.pdf

IRF1404ZL IRF1404ZL

PD - 97460AUTOMOTIVE GRADEAUIRF1404ZAUIRF1404ZSAUIRF1404ZLFeatures Advanced Process TechnologyHEXFET Power MOSFET Low On-ResistanceDV(BR)DSS 40V 175C Operating Temperature Fast SwitchingRDS(on) max.3.7m Repetitive Avalanche Allowed up to TjmaxGID (Silicon Limited) Lead-Free, RoHS Compliant 180A Automotive Qualified *SID (Package Limited)160A

 6.3. Size:181K  international rectifier
irf1404z.pdf

IRF1404ZL IRF1404ZL

PD - 11371AUTOMOTIVE MOSFETIRF1404ZHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 40V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 3.7m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID = 75ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes the latest

 6.4. Size:2504K  kexin
irf1404z.pdf

IRF1404ZL IRF1404ZL

DIP Type MOSFETN-Channel MOSFETIRF1404Z (KRF1404Z)TO-2209.90 0.20 4.50 0.20(8.70)+0.103.60 0.10 1.30 0.05 Features VDS (V) = 40V ID = 75 A (VGS = 10V) RDS(ON) 3.7m (VGS = 10V) Fast Switching1.27 0.10 1.52 0.10 Repetitive Avalanche Allowed up to Tjmax21 30.80 0.10 +0.100.50 0.05 2.40 0.202.54TYP 2.54T

 6.5. Size:258K  inchange semiconductor
irf1404zs.pdf

IRF1404ZL IRF1404ZL

Isc N-Channel MOSFET Transistor IRF1404ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

 6.6. Size:245K  inchange semiconductor
irf1404z.pdf

IRF1404ZL IRF1404ZL

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1404ZIIRF1404ZFEATURESStatic drain-source on-resistance:RDS(on) 3.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

Datasheet: IRF1324 , IRF1324L , IRF1324S , IRF1324S-7P , IRF1404L , IRF1404S , IRF1404Z , IRF1404ZG , IRF4905 , IRF1404ZS , IRF1405 , IRF1405L , IRF1405S , IRF1405Z , IRF1405ZL , IRF1405ZL-7P , IRF1405ZS .

 

 
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