IRF1407S MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF1407S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 75 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 100 A
Maximum Drain-Source On-State Resistance (Rds): 0.0078 Ohm
Package: D2PAK
IRF1407S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF1407S PDF doc:
1.1. irf1407s.pdf 
Size:159K _international_rectifier
PD -94335 IRF1407S IRF1407L Benefits Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175°C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 0.0078? Description G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ID = 1
3.1. irf1407.pdf Size:127K _international_rectifier
PD - 93907 AUTOMOTIVE MOSFET IRF1407 Typical Applications HEXFET® Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems VDSS = 75V Benefits Advanced Process Technology RDS(on) = 0.0078? Ultra Low On-Resistance G Dynamic dv/dt Rating 175°C Operating Temperature ID = 130AV S Fast Switching Repetitive Avalanche Allowed up to Tjmax Description
4.1. irf140-1-2-3.pdf Size:364K _st2
˙ţ
4.2. irf1404z.pdf Size:181K _international_rectifier
PD - 11371 AUTOMOTIVE MOSFET IRF1404Z HEXFET® Power MOSFET Features D ? Advanced Process Technology VDSS = 40V ? Ultra Low On-Resistance ? 175°C Operating Temperature RDS(on) = 3.7m? ? Fast Switching G ? Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techni
4.3. irf1404s.pdf Size:139K _international_rectifier
PD -93853B IRF1404S IRF1404L HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A Description S Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely
4.4. irf140.pdf Size:144K _international_rectifier
PD - 90369 REPETITIVE AVALANCHE AND dv/dt RATED IRF140 100V, N-CHANNEL HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF140 100V 0.077? 28A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very
4.5. irf1405z.pdf Size:179K _international_rectifier
PD - 94645 AUTOMOTIVE MOSFET IRF1405Z HEXFET® Power MOSFET Features D l Advanced Process Technology VDSS = 55V l Ultra Low On-Resistance l 175°C Operating Temperature RDS(on) = 4.9m? l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techni
4.6. irf1405s.pdf Size:154K _international_rectifier
PD -93992 IRF1405S AUTOMOTIVE MOSFET IRF1405L Typical Applications HEXFET® Power MOSFET Electric Power Steering (EPS) Anti-lock Braking System (ABS) D Wiper Control VDSS = 55V Climate Control Power Door RDS(on) = 5.3m? Benefits G Advanced Process Technology ID = 131AV Ultra Low On-Resistance S Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetiti
4.7. irf1404.pdf Size:107K _international_rectifier
PD -91896E IRF1404 HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A S Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resi
4.8. irf1404l.pdf Size:306K _international_rectifier
PD -93853C IRF1404S IRF1404L HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A Description S Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely
4.9. irf1405.pdf Size:116K _international_rectifier
PD -93991A AUTOMOTIVE MOSFET IRF1405 Typical Applications Electric Power Steering (EPS) HEXFET® Power MOSFET Anti-lock Braking System (ABS) D Wiper Control VDSS = 55V Climate Control Power Door Benefits RDS(on) = 5.3m? Advanced Process Technology G Ultra Low On-Resistance ID = 169AV Dynamic dv/dt Rating S 175°C Operating Temperature Fast Switching Repetitive Avalanch
4.10. irf1404z.pdf Size:2504K _kexin
DIP Type MOSFET N-Channel MOSFET IRF1404Z (KRF1404Z) TO-220 9.90 ± 0.20 4.50 ± 0.20 (8.70) +0.10 ø3.60 ± 0.10 1.30 –0.05 ■Features ● VDS (V) = 40V ● ID = 75 A (VGS = 10V) ● RDS(ON) ＜ 3.7mΩ (VGS = 10V) ● Fast Switching 1.27 ± 0.10 1.52 ± 0.10 ● Repetitive Avalanche Allowed up to Tjmax 2 1 3 0.80 ± 0.10 +0.10 0.50 –0.05 2.40 ± 0.20 2.54TYP 2.54T
Datasheet: IRF1405S , IRF1405Z , IRF1405ZL , IRF1405ZL-7P , IRF1405ZS , IRF1405ZS-7P , IRF1407 , IRF1407L , 2SK3569 , IRF1503 , IRF1503S , IRF1607 , IRF1902 , IRF2204 , IRF2204L , IRF2204S , IRF2804 .
