All MOSFET. IRF1902 Datasheet

 

IRF1902 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF1902

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 0.7(min) V

Maximum Drain Current |Id|: 4.2 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 5 nC

Rise Time (tr): 13 nS

Drain-Source Capacitance (Cd): 130 pF

Maximum Drain-Source On-State Resistance (Rds): 0.085 Ohm

Package: SO8

IRF1902 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF1902 Datasheet (PDF)

..1. irf1902.pdf Size:107K _international_rectifier

IRF1902 IRF1902

PD - 94282AIRF1902HEXFET Power MOSFET Ultra Low On-Resistance)VDSS RDS(on) max (m) ID))) N-Channel MOSFET20V 85@VGS = 4.5V 4.0A Surface Mount170@VGS = 2.7V 3.2A Available in Tape & ReelAADescription 1 8S DThese N-Channel HEXFET power MOSFETs from2 7S DInternational Rectifier utilize advanced processingtechniques to achieve the extr

..2. irf1902pbf.pdf Size:134K _international_rectifier

IRF1902 IRF1902

PD - 95496IRF1902PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl N-Channel MOSFET20V 85@VGS = 4.5V 4.0Al Surface Mount170@VGS = 2.7V 3.2Al Available in Tape & Reell Lead-FreeAADescription 1 8S DThese N-Channel HEXFET power MOSFETs from2 7S DInternational Rectifier utilize advanced processingtechniques to achieve the extremely lo

Datasheet: IRF1405ZS , IRF1405ZS-7P , IRF1407 , IRF1407L , IRF1407S , IRF1503 , IRF1503S , IRF1607 , STP60NF06 , IRF2204 , IRF2204L , IRF2204S , IRF2804 , IRF2804L , IRF2804S , IRF2804S-7P , IRF2805 .

 

 
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