IRF1902 PDF Specs and Replacement
Type Designator: IRF1902
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7(min) V
Qg ⓘ - Total Gate Charge: 5 nC
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: SO8
IRF1902 substitution
IRF1902 PDF Specs
irf1902.pdf
PD - 94282A IRF1902 HEXFET Power MOSFET Ultra Low On-Resistance ) VDSS RDS(on) max (m ) ID ) ) ) N-Channel MOSFET 20V 85@VGS = 4.5V 4.0A Surface Mount 170@VGS = 2.7V 3.2A Available in Tape & Reel A A Description 1 8 S D These N-Channel HEXFET power MOSFETs from 2 7 S D International Rectifier utilize advanced processing techniques to achieve the extr... See More ⇒
irf1902pbf.pdf
PD - 95496 IRF1902PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l N-Channel MOSFET 20V 85@VGS = 4.5V 4.0A l Surface Mount 170@VGS = 2.7V 3.2A l Available in Tape & Reel l Lead-Free A A Description 1 8 S D These N-Channel HEXFET power MOSFETs from 2 7 S D International Rectifier utilize advanced processing techniques to achieve the extremely lo... See More ⇒
Detailed specifications: IRF1405ZS , IRF1405ZS-7P , IRF1407 , IRF1407L , IRF1407S , IRF1503 , IRF1503S , IRF1607 , IRFP260 , IRF2204 , IRF2204L , IRF2204S , IRF2804 , IRF2804L , IRF2804S , IRF2804S-7P , IRF2805 .
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