All MOSFET. IRF1902 Datasheet

 

IRF1902 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF1902
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7(min) V
   |Id|ⓘ - Maximum Drain Current: 4.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SO8

 IRF1902 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF1902 Datasheet (PDF)

 ..1. Size:107K  international rectifier
 irf1902.pdf

IRF1902 IRF1902

PD - 94282AIRF1902HEXFET Power MOSFET Ultra Low On-Resistance)VDSS RDS(on) max (m) ID))) N-Channel MOSFET20V 85@VGS = 4.5V 4.0A Surface Mount170@VGS = 2.7V 3.2A Available in Tape & ReelAADescription 1 8S DThese N-Channel HEXFET power MOSFETs from2 7S DInternational Rectifier utilize advanced processingtechniques to achieve the extr

 ..2. Size:134K  international rectifier
 irf1902pbf.pdf

IRF1902 IRF1902

PD - 95496IRF1902PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl N-Channel MOSFET20V 85@VGS = 4.5V 4.0Al Surface Mount170@VGS = 2.7V 3.2Al Available in Tape & Reell Lead-FreeAADescription 1 8S DThese N-Channel HEXFET power MOSFETs from2 7S DInternational Rectifier utilize advanced processingtechniques to achieve the extremely lo

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top