All MOSFET. IRF2907ZS Datasheet

 

IRF2907ZS Datasheet and Replacement


   Type Designator: IRF2907ZS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 170 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 970 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO263
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IRF2907ZS Datasheet (PDF)

 ..1. Size:420K  international rectifier
 irf2907zpbf irf2907zspbf irf2907zlpbf.pdf pdf_icon

IRF2907ZS

PD - 95489DIRF2907ZPbFIRF2907ZSPbFIRF2907ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 75Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.5mGl Lead-FreeID = 160ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achie

 ..2. Size:420K  international rectifier
 irf2907zlpbf irf2907zpbf irf2907zspbf.pdf pdf_icon

IRF2907ZS

PD - 95489DIRF2907ZPbFIRF2907ZSPbFIRF2907ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 75Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.5mGl Lead-FreeID = 160ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achie

 ..3. Size:258K  inchange semiconductor
 irf2907zs.pdf pdf_icon

IRF2907ZS

Isc N-Channel MOSFET Transistor IRF2907ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

 0.1. Size:293K  international rectifier
 auirf2907zs-7p.pdf pdf_icon

IRF2907ZS

PD - 96321AUTOMOTIVE GRADEAUIRF2907ZS-7PHEXFET Power MOSFETFeaturesDV(BR)DSS75Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.3.0ml 175C Operating TemperatureGl Fast Switchingmax. 3.8mSl Repetitive Avalanche Allowed up to TjmaxS (Pin 2, 3, 5, 6, 7)ID (Silicon Limited)180A l Lead-Free, RoHS CompliantG (Pin 1)l Automot

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History: IRFI7536G | FDMS9620S | WMM11N80M3

Keywords - IRF2907ZS MOSFET datasheet

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