IRF3007 Datasheet. Specs and Replacement

Type Designator: IRF3007  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0126 Ohm

Package: TO220AB

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IRF3007 substitution

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IRF3007 datasheet

 ..1. Size:149K  international rectifier
irf3007.pdf pdf_icon

IRF3007

PD -94424A AUTOMOTIVE MOSFET IRF3007 Typical Applications HEXFET Power MOSFET 42 Volts Automotive Electrical Systems D Features VDSS = 75V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 0.0126 Fast Switching G Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] Qualified ID = 75A S Description Specifically designed for Autom... See More ⇒

 ..2. Size:262K  international rectifier
irf3007pbf.pdf pdf_icon

IRF3007

PD -95618A IRF3007PbF Typical Applications HEXFET Power MOSFET l Industrial Motor Drive D Features VDSS = 75V l Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) = 0.0126 l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free ID = 75A S Description This design of HEXFET Power MOSFETs utilizes the lastest processing techniques to achieve... See More ⇒

 ..3. Size:245K  inchange semiconductor
irf3007.pdf pdf_icon

IRF3007

isc N-Channel MOSFET Transistor IRF3007 IIRF3007 FEATURES Static drain-source on-resistance RDS(on) 12.6m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒

 0.1. Size:323K  international rectifier
irf3007spbf irf3007lpbf.pdf pdf_icon

IRF3007

PD - 95494A IRF3007SPbF IRF3007LPbF Typical Applications l Industrial Motor Drive HEXFET Power MOSFET Features D VDSS = 75V l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching RDS(on) = 0.0126 G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free ID = 62A S Description This design of HEXFET Power MOSFETs utilizes the lastest processing technique... See More ⇒

Detailed specifications: IRF2807ZS, IRF2903Z, IRF2903ZL, IRF2903ZS, IRF2907Z, IRF2907ZL, IRF2907ZS, IRF2907ZS-7P, IRFP250, IRF3007L, IRF3007S, IRF3205Z, IRF3205ZL, IRF3205ZS, IRF3305, IRF3515L, IRF3610S

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.