All MOSFET. IRF3007 Datasheet

 

IRF3007 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF3007

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 75 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 80 A

Total Gate Charge (Qg): 89 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0126 Ohm

Package: TO220AB

IRF3007 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF3007 Datasheet (PDF)

0.1. irf3007spbf irf3007lpbf.pdf Size:323K _international_rectifier

IRF3007
IRF3007

PD - 95494AIRF3007SPbFIRF3007LPbFTypical Applicationsl Industrial Motor Drive HEXFET Power MOSFETFeatures DVDSS = 75Vl Ultra Low On-Resistancel 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.0126Gl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 62ASDescriptionThis design of HEXFET Power MOSFETs utilizesthe lastest processing technique

0.2. irf3007.pdf Size:149K _international_rectifier

IRF3007
IRF3007

PD -94424AAUTOMOTIVE MOSFETIRF3007Typical ApplicationsHEXFET Power MOSFET 42 Volts Automotive Electrical SystemsDFeaturesVDSS = 75V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 0.0126 Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] QualifiedID = 75ASDescriptionSpecifically designed for Autom

 0.3. irf3007pbf.pdf Size:262K _international_rectifier

IRF3007
IRF3007

PD -95618AIRF3007PbFTypical ApplicationsHEXFET Power MOSFETl Industrial Motor DriveDFeaturesVDSS = 75Vl Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) = 0.0126l Fast SwitchingGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 75ASDescription This design of HEXFET Power MOSFETs utilizes thelastest processing techniques to achieve

0.4. irf3007.pdf Size:245K _inchange_semiconductor

IRF3007
IRF3007

isc N-Channel MOSFET Transistor IRF3007IIRF3007FEATURESStatic drain-source on-resistance:RDS(on) 12.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

 0.5. irf3007l.pdf Size:256K _inchange_semiconductor

IRF3007
IRF3007

Isc N-Channel MOSFET Transistor IRF3007LFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75

0.6. irf3007s.pdf Size:258K _inchange_semiconductor

IRF3007
IRF3007

Isc N-Channel MOSFET Transistor IRF3007SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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