All MOSFET. IRF3709ZS Datasheet

 

IRF3709ZS Datasheet and Replacement


   Type Designator: IRF3709ZS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.25 V
   |Id| ⓘ - Maximum Drain Current: 87 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 17 nC
   tr ⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
   Package: TO263
 

 IRF3709ZS substitution

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IRF3709ZS Datasheet (PDF)

 ..1. Size:337K  international rectifier
 irf3709z irf3709zl irf3709zs.pdf pdf_icon

IRF3709ZS

PD - 95835IRF3709ZIRF3709ZSIRF3709ZLApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche VoltageTO-220ABD2Pak TO-262and CurrentIRF3709ZIRF3709ZS IRF3709ZLAbsolute Maximum RatingsParameter M

 ..2. Size:377K  international rectifier
 irf3709zlpbf irf3709zpbf irf3709zspbf.pdf pdf_icon

IRF3709ZS

PD -95465IRF3709ZPbFIRF3709ZSPbFIRF3709ZLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl Lead-Free30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche VoltageTO-220ABD2Pak TO-262and CurrentIRF3709ZIRF3709ZS IRF3709ZLAbsolute Maximum

 ..3. Size:377K  international rectifier
 irf3709zpbf irf3709zspbf irf3709zlpbf.pdf pdf_icon

IRF3709ZS

PD -95465IRF3709ZPbFIRF3709ZSPbFIRF3709ZLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl Lead-Free30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche VoltageTO-220ABD2Pak TO-262and CurrentIRF3709ZIRF3709ZS IRF3709ZLAbsolute Maximum

 ..4. Size:248K  inchange semiconductor
 irf3709zs.pdf pdf_icon

IRF3709ZS

isc N-Channel MOSFET Transistor IRF3709ZSDESCRIPTIONStatic drain-source on-resistance:RDS(on) 6.3m@V = 10VGSDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .High Frequency Synchronous Buck Converters for ComputerProcessor Power.ABSOLUTE MAXIMUM

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Datasheet: IRF3708 , IRF3708S , IRF3709 , IRF3709L , IRF3709S , IRF3709Z , IRF3709ZCS , IRF3709ZL , EMB04N03H , IRF3710Z , IRF3710ZG , IRF3710ZL , IRF3710ZS , IRF3711Z , IRF3711ZCS , IRF3711ZL , IRF3711ZS .

Keywords - IRF3709ZS MOSFET datasheet

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 IRF3709ZS equivalent finder
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