IRF3709ZS - описание и поиск аналогов

 ..1. Size:337K  international rectifier
 irf3709z irf3709zl irf3709zs.pdf 

PD - 95835 IRF3709Z IRF3709ZS IRF3709ZL Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power 30V 6.3m 17nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage TO-220AB D2Pak TO-262 and Current IRF3709Z IRF3709ZS IRF3709ZL Absolute Maximum Ratings Parameter M

 ..2. Size:377K  international rectifier
 irf3709zlpbf irf3709zpbf irf3709zspbf.pdf 

PD -95465 IRF3709ZPbF IRF3709ZSPbF IRF3709ZLPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l Lead-Free 30V 6.3m 17nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage TO-220AB D2Pak TO-262 and Current IRF3709Z IRF3709ZS IRF3709ZL Absolute Maximum

 ..3. Size:377K  international rectifier
 irf3709zpbf irf3709zspbf irf3709zlpbf.pdf 

PD -95465 IRF3709ZPbF IRF3709ZSPbF IRF3709ZLPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l Lead-Free 30V 6.3m 17nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage TO-220AB D2Pak TO-262 and Current IRF3709Z IRF3709ZS IRF3709ZL Absolute Maximum

 ..4. Size:248K  inchange semiconductor
 irf3709zs.pdf 

isc N-Channel MOSFET Transistor IRF3709ZS DESCRIPTION Static drain-source on-resistance RDS(on) 6.3m @V = 10V GS Drain Source Voltage V = 30V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . High Frequency Synchronous Buck Converters for Computer Processor Power. ABSOLUTE MAXIMUM

 6.1. Size:312K  international rectifier
 irf3709zcs.pdf 

PD - 95836 IRF3709ZCS IRF3709ZCL Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power 30V 6.3m 17nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current D2Pak TO-262 IRF3709ZCS IRF3709ZCL Absolute Maximum Ratings Parameter Max. Units VDS Drain-to-S

 6.2. Size:312K  international rectifier
 irf3709zcl.pdf 

PD - 95836 IRF3709ZCS IRF3709ZCL Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power 30V 6.3m 17nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current D2Pak TO-262 IRF3709ZCS IRF3709ZCL Absolute Maximum Ratings Parameter Max. Units VDS Drain-to-S

 6.3. Size:361K  international rectifier
 irf3709zclpbf.pdf 

PD - 95529 IRF3709ZCSPbF IRF3709ZCLPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l Lead-Free 30V 6.3m 17nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current D2Pak TO-262 IRF3709ZCS IRF3709ZCL Absolute Maximum Ratings Parameter Max. Uni

 6.4. Size:271K  inchange semiconductor
 irf3709zcs.pdf 

isc N-Channel MOSFET Transistor IRF3709ZCS DESCRIPTION Static drain-source on-resistance RDS(on) 6.3m @V = 10V GS Drain Source Voltage V = 30V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . High Frequency Synchronous Buck Converters for Computer Processor Power. ABSOLUTE MAXIMUM

 6.5. Size:247K  inchange semiconductor
 irf3709z.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3709Z IIRF3709Z FEATURES Low drain-source on-resistance RDS(on) 6.3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R