IRF3805L Specs and Replacement
Type Designator: IRF3805L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 210 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 1260 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
Package: TO262
IRF3805L substitution
- MOSFET ⓘ Cross-Reference Search
IRF3805L datasheet
irf3805lpbf irf3805pbf irf3805spbf.pdf
PD - 97046A IRF3805PbF IRF3805SPbF IRF3805LPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 3.3m G Description ID = 75A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely... See More ⇒
irf3805pbf irf3805spbf irf3805lpbf.pdf
PD - 97046A IRF3805PbF IRF3805SPbF IRF3805LPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 3.3m G Description ID = 75A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely... See More ⇒
irf3805l-7ppbf irf3805s-7ppbf.pdf
PD - 97205B IRF3805S-7PPbF IRF3805L-7PPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 2.6m G l Lead-Free S ID = 160A Description S (Pin 2, 3, 5, 6, 7) G (Pin 1) This HEXFET Power MOSFET utilizes the latest proc... See More ⇒
irf3805s-7ppbf irf3805l-7ppbf.pdf
IRF3805S-7PPbF IRF3805L-7PPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 2.6m G l Lead-Free S ID = 160A Description S (Pin 2, 3, 5, 6, 7) G (Pin 1) This HEXFET Power MOSFET utilizes the latest processing techni... See More ⇒
Detailed specifications: IRF3710ZL, IRF3710ZS, IRF3711Z, IRF3711ZCS, IRF3711ZL, IRF3711ZS, IRF3717, IRF3805, IRFP064N, IRF3805S, IRF3805S-7P, IRF3808, IRF3808S, IRF4104, IRF4104G, IRF4104S, IRF540Z
Keywords - IRF3805L MOSFET specs
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