IRF3805L Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IRF3805L
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 210 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 1260 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm
Тип корпуса: TO262
- подбор MOSFET транзистора по параметрам
IRF3805L Datasheet (PDF)
irf3805lpbf irf3805pbf irf3805spbf.pdf

PD - 97046AIRF3805PbFIRF3805SPbFIRF3805LPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 3.3mGDescriptionID = 75A This HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely
irf3805pbf irf3805spbf irf3805lpbf.pdf

PD - 97046AIRF3805PbFIRF3805SPbFIRF3805LPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 3.3mGDescriptionID = 75A This HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely
irf3805l-7ppbf irf3805s-7ppbf.pdf

PD - 97205BIRF3805S-7PPbFIRF3805L-7PPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 2.6mGl Lead-FreeSID = 160ADescriptionS (Pin 2, 3, 5, 6, 7)G (Pin 1) This HEXFET Power MOSFET utilizes the latestproc
irf3805s-7ppbf irf3805l-7ppbf.pdf

IRF3805S-7PPbFIRF3805L-7PPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 2.6mGl Lead-FreeSID = 160ADescriptionS (Pin 2, 3, 5, 6, 7)G (Pin 1) This HEXFET Power MOSFET utilizes the latestprocessing techni
Другие MOSFET... IRF3710ZL , IRF3710ZS , IRF3711Z , IRF3711ZCS , IRF3711ZL , IRF3711ZS , IRF3717 , IRF3805 , 8205A , IRF3805S , IRF3805S-7P , IRF3808 , IRF3808S , IRF4104 , IRF4104G , IRF4104S , IRF540Z .
History: 2SK2969 | UPA1770 | KRF7703 | IXTH10N60 | RU1HL8L | TSM4946DCS | IRFH4226
History: 2SK2969 | UPA1770 | KRF7703 | IXTH10N60 | RU1HL8L | TSM4946DCS | IRFH4226



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