IRF6201 Datasheet and Replacement
Type Designator: IRF6201
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 27 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 1735 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00245 Ohm
Package: SO8
IRF6201 Datasheet (PDF)
irf6201pbf.pdf

PD - 97500AIRF6201PbFHEXFET Power MOSFETVDS20 VRDS(on) max 2.45 m (@VGS = 4.5V)RDS(on) max 2.75 m(@VGS = 2.5V)Qg (typical)130 nC SO-8ID 27 A(@TA = 25C)Applications OR-ing or hot-swap MOSFET Battery operated DC motor inverter MOSFET System/Load switchFeatures and BenefitsFeatures BenefitsLow RDSon ( 2.45m @ Vgs = 4.5V) Lower
irf620b irfs620b.pdf

November 2001IRF620B/IRFS620B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.0A, 200V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to
irf620spbf.pdf

IRF620S, SiHF620SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200 Definition Surface MountRDS(on) ()VGS = 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 14 Dynamic dV/dt RatingQgs (nC) 3.0 Repetitive Avalanche RatedQgd (nC) 7.9 Fast Switching Simple Drive RequirementsConfiguratio
Datasheet: IRF4104 , IRF4104G , IRF4104S , IRF540Z , IRF540ZL , IRF540ZS , IRF5801 , IRF5802 , IRFP460 , IRF630N , IRF630NL , IRF630NS , IRF640N , IRF640NL , IRF640NS , IRF6603 , IRF6604 .
History: 40600
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History: 40600



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