IRF6201 PDF and Equivalents Search

 

IRF6201 PDF Specs and Replacement


   Type Designator: IRF6201
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 1735 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00245 Ohm
   Package: SO8
 

 IRF6201 substitution

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IRF6201 PDF Specs

 ..1. Size:247K  international rectifier
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IRF6201

PD - 97500A IRF6201PbF HEXFET Power MOSFET VDS 20 V RDS(on) max 2.45 m (@VGS = 4.5V) RDS(on) max 2.75 m (@VGS = 2.5V) Qg (typical) 130 nC SO-8 ID 27 A (@TA = 25 C) Applications OR-ing or hot-swap MOSFET Battery operated DC motor inverter MOSFET System/Load switch Features and Benefits Features Benefits Low RDSon ( 2.45m @ Vgs = 4.5V) Lower ... See More ⇒

 8.1. Size:881K  1
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IRF6201

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 8.2. Size:182K  international rectifier
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IRF6201

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 8.3. Size:162K  international rectifier
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IRF6201

IRF620S, SiHF620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition Surface Mount RDS(on) ( )VGS = 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 14 Dynamic dV/dt Rating Qgs (nC) 3.0 Repetitive Avalanche Rated Qgd (nC) 7.9 Fast Switching Simple Drive Requirements Configuratio... See More ⇒

Detailed specifications: IRF4104 , IRF4104G , IRF4104S , IRF540Z , IRF540ZL , IRF540ZS , IRF5801 , IRF5802 , IRF640 , IRF630N , IRF630NL , IRF630NS , IRF640N , IRF640NL , IRF640NS , IRF6603 , IRF6604 .

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