IRF6610 Datasheet and Replacement
Type Designator: IRF6610
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
tr ⓘ - Rise Time: 51 nS
Cossⓘ - Output Capacitance: 440 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
Package: DIRECTFET
IRF6610 substitution
IRF6610 Datasheet (PDF)
irf6610.pdf

PD - 97012IRF6610DirectFET Power MOSFET Typical values (unless otherwise specified) Lead and Bromide Free VDSS VGS RDS(on) RDS(on) Low Profile (
irf6614pbf irf6614trpbf.pdf

PD -97090IRF6614PbFIRF6614TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant VDSS VGS RDS(on) RDS(on) l Lead-Free (Qualified up to 260C Reflow)40V max 20V max 5.9m@ 10V 7.1m@ 4.5Vl Application Specific MOSFETsQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ideal for CPU Core DC-DC Converters19nC 6.0nC 1.4nC 5.5nC 9.5nC 1.8Vl Low
irf6619.pdf

PD - 96917BIRF6619DirectFET Power MOSFET Typical values (unless otherwise specified)l Low Profile (
irf6612.pdf

PD - 95842IRF6612/IRF6612TR1HEXFET Power MOSFETVDSS RDS(on) max Qg(typ.)l Application Specific MOSFETs 30V 3.3m@VGS = 10V 30nC4.4m@VGS = 4.5Vl Ideal for CPU Core DC-DC Convertersl Low Conduction Lossesl Low Switching Lossesl Low Profile (
Datasheet: IRF640N , IRF640NL , IRF640NS , IRF6603 , IRF6604 , IRF6607 , IRF6608 , IRF6609 , IRF9540 , IRF6611 , IRF6612 , IRF6613 , IRF6614 , IRF6616 , IRF6617 , IRF6618 , IRF6619 .
Keywords - IRF6610 MOSFET datasheet
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