IRF6619 Specs and Replacement
Type Designator: IRF6619
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 71 nS
Cossⓘ - Output Capacitance: 1580 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
Package: DIRECTFET
IRF6619 substitution
- MOSFET ⓘ Cross-Reference Search
IRF6619 datasheet
irf6619.pdf
PD - 96917B IRF6619 DirectFET Power MOSFET Typical values (unless otherwise specified) l Low Profile (... See More ⇒
irf6610.pdf
PD - 97012 IRF6610 DirectFET Power MOSFET Typical values (unless otherwise specified) Lead and Bromide Free VDSS VGS RDS(on) RDS(on) Low Profile (... See More ⇒
irf6614pbf irf6614trpbf.pdf
PD -97090 IRF6614PbF IRF6614TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) l RoHS Compliant VDSS VGS RDS(on) RDS(on) l Lead-Free (Qualified up to 260 C Reflow) 40V max 20V max 5.9m @ 10V 7.1m @ 4.5V l Application Specific MOSFETs Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ideal for CPU Core DC-DC Converters 19nC 6.0nC 1.4nC 5.5nC 9.5nC 1.8V l Low... See More ⇒
irf6612.pdf
PD - 95842 IRF6612/IRF6612TR1 HEXFET Power MOSFET VDSS RDS(on) max Qg(typ.) l Application Specific MOSFETs 30V 3.3m @VGS = 10V 30nC 4.4m @VGS = 4.5V l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (... See More ⇒
Detailed specifications: IRF6610, IRF6611, IRF6612, IRF6613, IRF6614, IRF6616, IRF6617, IRF6618, 2SK3878, IRF6620, IRF6621, IRF6622, IRF6623, IRF6626, IRF6628, IRF6629, IRF6631
Keywords - IRF6619 MOSFET specs
IRF6619 cross reference
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