IRF6619 Specs and Replacement

Type Designator: IRF6619

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 71 nS

Cossⓘ - Output Capacitance: 1580 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm

Package: DIRECTFET

IRF6619 substitution

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IRF6619 datasheet

 ..1. Size:279K  international rectifier
irf6619.pdf pdf_icon

IRF6619

PD - 96917B IRF6619 DirectFET Power MOSFET Typical values (unless otherwise specified) l Low Profile (... See More ⇒

 8.1. Size:249K  international rectifier
irf6610.pdf pdf_icon

IRF6619

PD - 97012 IRF6610 DirectFET Power MOSFET Typical values (unless otherwise specified) Lead and Bromide Free VDSS VGS RDS(on) RDS(on) Low Profile (... See More ⇒

 8.2. Size:268K  international rectifier
irf6614pbf irf6614trpbf.pdf pdf_icon

IRF6619

PD -97090 IRF6614PbF IRF6614TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) l RoHS Compliant VDSS VGS RDS(on) RDS(on) l Lead-Free (Qualified up to 260 C Reflow) 40V max 20V max 5.9m @ 10V 7.1m @ 4.5V l Application Specific MOSFETs Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ideal for CPU Core DC-DC Converters 19nC 6.0nC 1.4nC 5.5nC 9.5nC 1.8V l Low... See More ⇒

 8.3. Size:200K  international rectifier
irf6612.pdf pdf_icon

IRF6619

PD - 95842 IRF6612/IRF6612TR1 HEXFET Power MOSFET VDSS RDS(on) max Qg(typ.) l Application Specific MOSFETs 30V 3.3m @VGS = 10V 30nC 4.4m @VGS = 4.5V l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (... See More ⇒

Detailed specifications: IRF6610, IRF6611, IRF6612, IRF6613, IRF6614, IRF6616, IRF6617, IRF6618, 2SK3878, IRF6620, IRF6621, IRF6622, IRF6623, IRF6626, IRF6628, IRF6629, IRF6631

Keywords - IRF6619 MOSFET specs

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