IRF6629
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF6629
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.35
V
|Id|ⓘ - Maximum Drain Current: 29
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 34
nC
trⓘ - Rise Time: 67
nS
Cossⓘ -
Output Capacitance: 1130
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0021
Ohm
Package:
DIRECTFET
IRF6629
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF6629
Datasheet (PDF)
..1. Size:264K international rectifier
irf6629pbf.pdf 
PD - 97235IRF6629PbFIRF6629TRPbFDirectFET Power MOSFET l RoHs Compliant Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)VDSS VGS RDS(on) RDS(on) l Application Specific MOSFETs25V max 20V max 1.6m@ 10V 2.1m@ 4.5Vl Ideal for CPU Core DC-DC ConvertersQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Low Conduction Losses34nC 11nC 4.2n
8.1. Size:274K international rectifier
irf6628pbf.pdf
PD - 97234IRF6628PbFIRF6628TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant l Lead-Free (Qualified up to 260C Reflow) VDSS VGS RDS(on) RDS(on) l Application Specific MOSFETs25V max 20V max 1.9m@ 10V 2.5m@ 4.5Vl Ideal for CPU Core DC-DC ConvertersQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Low Conduction Losses31nC 12nC 4.1nC
8.2. Size:180K international rectifier
irf6620.pdf
PD - 95823AIRF6620HEXFET Power MOSFETl Application Specific MOSFETsl Ideal for CPU Core DC-DC ConvertersVDSS RDS(on) maxQg(typ.)l Low Conduction Losses20V 2.7m@VGS = 10V 28nCl Low Switching Losses3.6m@VGS = 4.5Vl Low Profile (
8.3. Size:636K international rectifier
irf6626.pdf
PD - 96976DIRF6626DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bromide l Low Profile (
8.4. Size:245K international rectifier
irf6622pbf.pdf
PD - 97244IRF6622PbFIRF6622TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant VDSS VGS RDS(on) RDS(on) l Lead-Free (Qualified up to 260C Reflow)25V max 20V max 4.9m@ 10V 6.8m@ 4.5Vl Application Specific MOSFETsQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ideal for CPU Core DC-DC Converters11nC 3.8nC 1.6nC 7.1nC 7.7nC 1.8Vl Lo
8.5. Size:170K international rectifier
irf6623.pdf
PD - 95824BIRF6623HEXFET Power MOSFETl Application Specific MOSFETsl Ideal for CPU Core DC-DC ConvertersVDSS RDS(on) maxQg(typ.)l Low Conduction Losses20V 5.7m@VGS = 10V 11nCl Low Switching Losses9.7m@VGS = 4.5Vl Low Profile (
8.6. Size:259K international rectifier
irf6621.pdf
PD - 97005AIRF6621DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Low Profile (
8.7. Size:232K infineon
irf6620pbf irf6620trpbf.pdf
PD - 97092IRF6620PbFIRF6620TRPbFDirectFET Power MOSFET l RoHS Compliant VDSS RDS(on) maxQg(typ.)l Lead-Free (Qualified up to 260C Reflow)l Application Specific MOSFETs20V 2.7m@VGS = 10V 28nCl Ideal for CPU Core DC-DC Converters3.6m@VGS = 4.5Vl Low Conduction Lossesl High Cdv/dt Immunityl Low Profile (
8.8. Size:237K infineon
irf6623pbf irf6623trpbf.pdf
PD - 97085IRF6623PbFIRF6623TRPbFl RoHS Compliant DirectFET Power MOSFET l Lead-Free (Qualified up to 260C Reflow)VDSS RDS(on) maxQg(typ.)l Application Specific MOSFETs20V 5.7m@VGS = 10V 11nCl Ideal for CPU Core DC-DC Converters9.7m@VGS = 4.5Vl Low Conduction Lossesl High Cdv/dt Immunityl Low Profile (
Datasheet: IRF6618
, IRF6619
, IRF6620
, IRF6621
, IRF6622
, IRF6623
, IRF6626
, IRF6628
, 2SK3568
, IRF6631
, IRF6633
, IRF6633A
, IRF6635
, IRF6636
, IRF6637
, IRF6638
, IRF6641
.
