IRF6643 Datasheet and Replacement
Type Designator: IRF6643
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0345 Ohm
Package: DIRECTFET
IRF6643 substitution
IRF6643 Datasheet (PDF)
irf6643pbf.pdf
PD - 97112AIRF6643TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant VDSS VGS RDS(on) l Lead-Free (Qualified up to 260C Reflow)150V max 20V max 29m@ 10Vl Application Specific MOSFETsl Ideal for High Performance Isolated Converter Qg tot Qgd Vgs(th) Primary Switch Socket39nC 11nC 4.0Vl Optimized for Synchronous Rectificat
irf6641pbf.pdf
PD - 97262IRF6641TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant VDSS VGS RDS(on) l Lead-Free (Qualified up to 260C Reflow)200V max 20V max 51m@ 10Vl Application Specific MOSFETsQg tot Qgd Vgs(th) l Ideal for High Performance Isolated Converter34nC 9.5nC 4.0VPrimary Switch Socketl Optimized for Synchronous Rectifica
irf6644.pdf
PD - 96908EIRF6644DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) l Low Profile (
irf6646.pdf
PD - 96995AIRF6646DirectFET Power MOSFET Typical values (unless otherwise specified) RoHS compliant containing no lead or bromide VDSS VGS RDS(on) Low Profile (
Datasheet: IRF6631 , IRF6633 , IRF6633A , IRF6635 , IRF6636 , IRF6637 , IRF6638 , IRF6641 , 5N65 , IRF6644 , IRF6645 , IRF6646 , IRF6648 , IRF6655 , IRF6662 , IRF6665 , IRF6668 .
Keywords - IRF6643 MOSFET datasheet
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