IRF6648 Datasheet and Replacement
Type Designator: IRF6648
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 600 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: DIRECTFET
IRF6648 substitution
IRF6648 Datasheet (PDF)
irf6648pbf irf6648trpbf.pdf

IRF6648PbF IRF6648TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) RoHs Compliant Lead-Free (Qualified up to 260C Reflow) VDSS VGS RDS(on) Application Specific MOSFETs 60V min 20V max 5.5m@ 10V Optimized for Synchronous Rectification for 5V to 12V outputs Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Low Co
irf6641pbf.pdf

PD - 97262IRF6641TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant VDSS VGS RDS(on) l Lead-Free (Qualified up to 260C Reflow)200V max 20V max 51m@ 10Vl Application Specific MOSFETsQg tot Qgd Vgs(th) l Ideal for High Performance Isolated Converter34nC 9.5nC 4.0VPrimary Switch Socketl Optimized for Synchronous Rectifica
irf6644.pdf

PD - 96908EIRF6644DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) l Low Profile (
irf6646.pdf

PD - 96995AIRF6646DirectFET Power MOSFET Typical values (unless otherwise specified) RoHS compliant containing no lead or bromide VDSS VGS RDS(on) Low Profile (
Datasheet: IRF6636 , IRF6637 , IRF6638 , IRF6641 , IRF6643 , IRF6644 , IRF6645 , IRF6646 , AO4407 , IRF6655 , IRF6662 , IRF6665 , IRF6668 , IRF6674 , IRF6678 , IRF6691 , IRF6706S2 .
History: PE532DY | OSG60R1K8PF
Keywords - IRF6648 MOSFET datasheet
IRF6648 cross reference
IRF6648 equivalent finder
IRF6648 lookup
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History: PE532DY | OSG60R1K8PF



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