IRF6708S2 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF6708S2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.35 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 6.6 nC
trⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 254 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0089 Ohm
Package: DIRECTFET
IRF6708S2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF6708S2 Datasheet (PDF)
irf6708s2trpbf.pdf
PD - 96314CIRF6708S2TRPbFIRF6708S2TR1PbFDirectFET Power MOSFET l RoHS Compliant Containing No Lead and Halogen Free Typical values (unless otherwise specified)l Low Profile (
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PD - 97540IRF6702M2DTRPbFIRF6702M2DTR1PbFApplicationsl Dual Common Drain Control MOSFETs forDirectFET Power MOSFET Multiphase DC-DC Converters Typical values (unless otherwise specified)FeaturesVDSS VGS RDS(on) RDS(on) l Replaces Two discrete high side MOSFETs30V max 20V max 5.2m@ 10V 8.6m@ 4.5Vl Optimized for High Frequency Switchingl Low Profile (
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Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: HUF75329P3
History: HUF75329P3
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918