All MOSFET. IRF6720S2 Datasheet

 

IRF6720S2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF6720S2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.35 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 7.9 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: DIRECTFET

 IRF6720S2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF6720S2 Datasheet (PDF)

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