IRF6794M Datasheet. Specs and Replacement
Type Designator: IRF6794M 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 1260 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
Package: DIRECTFET
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IRF6794M substitution
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IRF6794M datasheet
irf6794m.pdf
PD - 97457 IRF6794MPbF IRF6794MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified) l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max 20V max 1.3m @ 10V 2.3m @ 4.5V l Low Profile (... See More ⇒
irf6795m.pdf
PD - 97321C IRF6795MPbF IRF6795MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified) l RoHS Compliant Containing No Lead and Halogen Free VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max 20V max 1.4m @ 10V 2.4m @ 4.5V l Low Profile (... See More ⇒
irf6798m.pdf
PD - 97433B IRF6798MPbF IRF6798MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified) l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max 20V max 0.95m @ 10V 1.6m @ 4.5V l Low Profile (... See More ⇒
irf6797mpbf irf6797mtrpbf.pdf
PD - 97320A IRF6797MPbF IRF6797MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified) l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode l Low Profile (... See More ⇒
Detailed specifications: IRF6724M, IRF6725M, IRF6726M, IRF6727M, IRF6728M, IRF6729M, IRF6775M, IRF6785M, 7N60, IRF6795M, IRF6797M, IRF6798M, IRF6810S, IRF6811S, IRF6894M, IRF6898M, IRF7353D2
Keywords - IRF6794M MOSFET specs
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