IRF6798M Datasheet and Replacement
Type Designator: IRF6798M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 37 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 1800 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0013 Ohm
Package: DIRECTFET
IRF6798M substitution
IRF6798M Datasheet (PDF)
irf6798m.pdf

PD - 97433BIRF6798MPbFIRF6798MTRPbFHEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified)l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode25V max 20V max 0.95m@ 10V 1.6m@ 4.5Vl Low Profile (
irf6795m.pdf

PD - 97321CIRF6795MPbFIRF6795MTRPbFHEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified)l RoHS Compliant Containing No Lead and Halogen Free VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode25V max 20V max 1.4m@ 10V 2.4m@ 4.5Vl Low Profile (
irf6797mpbf irf6797mtrpbf.pdf

PD - 97320AIRF6797MPbFIRF6797MTRPbFHEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified)l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diodel Low Profile (
irf6794m.pdf

PD - 97457IRF6794MPbFIRF6794MTRPbFHEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified)l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode25V max 20V max 1.3m@ 10V 2.3m@ 4.5Vl Low Profile (
Datasheet: IRF6727M , IRF6728M , IRF6729M , IRF6775M , IRF6785M , IRF6794M , IRF6795M , IRF6797M , P0903BDG , IRF6810S , IRF6811S , IRF6894M , IRF6898M , IRF7353D2 , IRF7402 , IRF7413Q , IRF7413Z .
Keywords - IRF6798M MOSFET datasheet
IRF6798M cross reference
IRF6798M equivalent finder
IRF6798M lookup
IRF6798M substitution
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History: IRFB4019 | IRF7450



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