IRF6810S Datasheet and Replacement
Type Designator: IRF6810S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 325 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
Package: DIRECTFET
IRF6810S substitution
IRF6810S Datasheet (PDF)
irf6810spbf.pdf

PD -96393IRF6810STRPbFIRF6810STR1PbFDirectFETplus Power MOSFET l RoHS Compliant and Halogen Free Typical values (unless otherwise specified)l Low Profile (
irf6811spbf.pdf

PD-97634IRF6811SPbFIRF6811STRPbFDirectFETplus Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant and Halogen Free VDSS VGS RDS(on) RDS(on) l Low Profile (
irf6898mpbf.pdf

IRF6898MPbFIRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified)l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diodel Low Profile (
irf6894mpbf.pdf

PD - 97633AIRF6894MPbFIRF6894MTRPbFDirectFETplus MOSFET with Schottky Diode l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified)l Integrated Monolithic Schottky DiodeVDSS VGS RDS(on) RDS(on) l Low Profile (
Datasheet: IRF6728M , IRF6729M , IRF6775M , IRF6785M , IRF6794M , IRF6795M , IRF6797M , IRF6798M , 60N06 , IRF6811S , IRF6894M , IRF6898M , IRF7353D2 , IRF7402 , IRF7413Q , IRF7413Z , IRF7450 .
History: AP05N20GH | WMK13N50D1B | IRF7413Q | TMP4N80
Keywords - IRF6810S MOSFET datasheet
IRF6810S cross reference
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History: AP05N20GH | WMK13N50D1B | IRF7413Q | TMP4N80



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