All MOSFET. IRF6898M Datasheet

 

IRF6898M Datasheet and Replacement


   Type Designator: IRF6898M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 41 nC
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 1780 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0011 Ohm
   Package: DIRECTFET
 

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IRF6898M Datasheet (PDF)

 ..1. Size:243K  international rectifier
 irf6898mpbf.pdf pdf_icon

IRF6898M

IRF6898MPbFIRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified)l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diodel Low Profile (

 ..2. Size:502K  infineon
 irf6898mpbf irf6898mtrpbf.pdf pdf_icon

IRF6898M

IRF6898MPbF IRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified) RoHs Compliant Containing No Lead and Bromide Integrated Monolithic Schottky Diode VDSS VGS RDS(on) RDS(on) Low Profile (

 8.1. Size:248K  international rectifier
 irf6894mpbf.pdf pdf_icon

IRF6898M

PD - 97633AIRF6894MPbFIRF6894MTRPbFDirectFETplus MOSFET with Schottky Diode l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified)l Integrated Monolithic Schottky DiodeVDSS VGS RDS(on) RDS(on) l Low Profile (

 8.2. Size:215K  international rectifier
 irf6893m.pdf pdf_icon

IRF6898M

PD - 97761IRF6893MPbFIRF6893MTRPbFDirectFETplus MOSFET with Schottky Diode l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified)l Integrated Monolithic Schottky DiodeVDSS VGS RDS(on) RDS(on) l Low Profile (

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Keywords - IRF6898M MOSFET datasheet

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