IRF6898M MOSFET Datasheet: N-Ch, 25V, 35A. Full specification with pinout and replacement list

IRF6898M Specs and Replacement

Type Designator: IRF6898M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 1780 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0011 Ohm

Package: DIRECTFET

IRF6898M substitution

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IRF6898M datasheet

..1. Size:243K international rectifier
irf6898mpbf.pdf pdf_icon

IRF6898MPbF IRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified) l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode l Low Profile (... See More ⇒

..2. Size:502K infineon
irf6898mpbf irf6898mtrpbf.pdf pdf_icon

IRF6898MPbF IRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified) RoHs Compliant Containing No Lead and Bromide Integrated Monolithic Schottky Diode VDSS VGS RDS(on) RDS(on) Low Profile (... See More ⇒

8.1. Size:248K international rectifier
irf6894mpbf.pdf pdf_icon

PD - 97633A IRF6894MPbF IRF6894MTRPbF DirectFET plus MOSFET with Schottky Diode l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified) l Integrated Monolithic Schottky Diode VDSS VGS RDS(on) RDS(on) l Low Profile (... See More ⇒

8.2. Size:215K international rectifier
irf6893m.pdf pdf_icon

PD - 97761 IRF6893MPbF IRF6893MTRPbF DirectFET plus MOSFET with Schottky Diode l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified) l Integrated Monolithic Schottky Diode VDSS VGS RDS(on) RDS(on) l Low Profile (... See More ⇒