IRF7769L2 Datasheet and Replacement
Type Designator: IRF7769L2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 1240 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: DIRECTFET
IRF7769L2 Datasheet (PDF)
auirf7769l2.pdf

AUTOMOTIVE GRADEAUIRF7769L2TRAutomotive DirectFET Power MOSFET V(BR)DSS Advanced Process Technology 100V Optimized for Automotive Motor Drive, DC-DC andRDS(on) typ.2.8mother Heavy Load Applications Exceptionally Small Footprint and Low Profile max. 3.5m High Power DensityID (Silicon Limited)124A Low Parasitic ParametersQg 200nC Dual Sid
irf7769l2tr1pbf irf7769l2trpbf.pdf

PD - 97413BIRF7769L2TRPbFIRF7769L2TR1PbFDirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)l Ideal for High Performance Isolated ConverterVDSS VGS RDS(on) Primary Switch Socket100V min 20V max 2.8m@ 10Vl Optimized for Synchronous RectificationQg tot Qgd Vgs(th) l Low Co
auirf7769l2tr.pdf

AUTOMOTIVE GRADE AUIRF7769L2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 100V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 2.8m Exceptionally Small Footprint and Low Profile max. 3.5m High Power Density ID (Silicon Limited) 124A Low Parasitic Parameters Qg (typ
Datasheet: IRF7493 , IRF7494 , IRF7495 , IRF7607 , IRF7665S2 , IRF7805 , IRF7749L2 , IRF7759L2 , IRFB4115 , IRF7779L2 , IRF7799L2 , IRF7805A , IRF7805Q , IRF7805Z , IRF7805ZG , IRF7807A , IRF7807D1 .
History: KIA65R190 | AFN4900W | MS6N95 | MTP15N15
Keywords - IRF7769L2 MOSFET datasheet
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History: KIA65R190 | AFN4900W | MS6N95 | MTP15N15



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