IRF7854
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF7854
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.9
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 27
nC
trⓘ - Rise Time: 8.5
nS
Cossⓘ -
Output Capacitance: 350
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0134
Ohm
Package:
SO8
IRF7854
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF7854
Datasheet (PDF)
..1. Size:226K international rectifier
irf7854pbf.pdf 
PD - 97172IRF7854PbFHEXFET Power MOSFETApplicationsl Primary Side Switch in Bridge or two-VDSS RDS(on) max IDswitch forward topologies using 48V13.4m:@VGS = 10V80V 10A(10%) or 36V to 60V ETSI range inputs.l Secondary Side SynchronousRectification Switch for 12VoutAl Suitable for 48V Non-Isolated A1 8S D Synchronous Buck DC-DC Applications2 7S D3 6Bene
..2. Size:226K infineon
irf7854pbf.pdf
PD - 97172IRF7854PbFHEXFET Power MOSFETApplicationsl Primary Side Switch in Bridge or two-VDSS RDS(on) max IDswitch forward topologies using 48V13.4m:@VGS = 10V80V 10A(10%) or 36V to 60V ETSI range inputs.l Secondary Side SynchronousRectification Switch for 12VoutAl Suitable for 48V Non-Isolated A1 8S D Synchronous Buck DC-DC Applications2 7S D3 6Bene
8.1. Size:208K international rectifier
irf7853pbf.pdf
PD - 97069IRF7853PbFHEXFET Power MOSFETApplicationsl Primary Side Switch in Bridge TopologyVDSS RDS(on) max ID in Universal Input (36-75Vin) Isolated18m:@VGS = 10V100V 8.3A DC-DC Convertersl Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DCAConvertersA1 8S Dl Secondary Side Synchronous2 7Rectification Switch for 15Vout S Dl Suitable
8.2. Size:613K international rectifier
irf7855pbf.pdf
PD - 97173AIRF7855PbFHEXFET Power MOSFETApplicationsl Primary Side Switch in Bridge Topology VDSS RDS(on) max IDin Isolated DC-DC Converters9.4m:@VGS = 10V60V 12Al Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DCConvertersl Secondary Side SynchronousAARectification Switch for 15Vout1 8S Dl Suitable for 48V Non-Isolated2 7S DSynchron
8.3. Size:208K infineon
irf7853pbf.pdf
PD - 97069IRF7853PbFHEXFET Power MOSFETApplicationsl Primary Side Switch in Bridge TopologyVDSS RDS(on) max ID in Universal Input (36-75Vin) Isolated18m:@VGS = 10V100V 8.3A DC-DC Convertersl Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DCAConvertersA1 8S Dl Secondary Side Synchronous2 7Rectification Switch for 15Vout S Dl Suitable
8.4. Size:613K infineon
irf7855pbf.pdf
PD - 97173AIRF7855PbFHEXFET Power MOSFETApplicationsl Primary Side Switch in Bridge Topology VDSS RDS(on) max IDin Isolated DC-DC Converters9.4m:@VGS = 10V60V 12Al Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DCConvertersl Secondary Side SynchronousAARectification Switch for 15Vout1 8S Dl Suitable for 48V Non-Isolated2 7S DSynchron
8.5. Size:2316K kexin
irf7855.pdf
SMD Type MOSFETN-Channel MOSFETIRF7855 (KRF7855)SOP-8 Features VDS (V) = 60V ID = 12 A (VGS = 10V) RDS(ON) 9.4m (VGS = 10V)A 1.50 0.15A1 8S D2 7S D1 Source 5 Drain6 Drain3 6 2 SourceS D7 Drain3 Source4 8 Drain54 GateG D Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate
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