IRFB3077G PDF and Equivalents Search

 

IRFB3077G Specs and Replacement

Type Designator: IRFB3077G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 370 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 210 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 87 nS

Cossⓘ - Output Capacitance: 820 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm

Package: TO220AB

IRFB3077G substitution

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IRFB3077G datasheet

 ..1. Size:291K  international rectifier
irfb3077gpbf.pdf pdf_icon

IRFB3077G

PD - 96200 IRFB3077GPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 2.8m l Hard Switched and High Frequency Circuits max. 3.3m Benefits G l Worldwide Best RDS(on) in TO-220 ID (Silicon Limited) 210A l Improved Gate, Avalanche and Dynamic dV/dt ID (P... See More ⇒

 6.1. Size:295K  international rectifier
irfb3077pbf.pdf pdf_icon

IRFB3077G

PD - 97047B IRFB3077PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 2.8m l Hard Switched and High Frequency Circuits max. 3.3m Benefits G l Worldwide Best RDS(on) in TO-220 ID (Silicon Limited) 210A c l Improved Gate, Avalanche and Dynamic dV/... See More ⇒

 6.2. Size:1055K  cn minos
irfb3077.pdf pdf_icon

IRFB3077G

80V N-Channel Power MOSFET DESCRIPTION The IRFB3077 uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) in a wide variety of applications. KEY CHARACTERISTICS V = 80V,I = 200A R ... See More ⇒

 6.3. Size:246K  inchange semiconductor
irfb3077.pdf pdf_icon

IRFB3077G

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3077 IIRFB3077 FEATURES Static drain-source on-resistance RDS(on) 3.3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM... See More ⇒

Detailed specifications: IRFB23N15D, IRFB23N20D, IRFB260N, IRFB3004, IRFB3004G, IRFB3006, IRFB3006G, IRFB3077, AO3400A, IRFB31N20D, IRFB3206, IRFB3206G, IRFB3207, IRFB3207Z, IRFB3207ZG, IRFB3256, IRFB3306

Keywords - IRFB3077G MOSFET specs

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