IRFB3077G - Даташиты. Аналоги. Основные параметры
Наименование производителя: IRFB3077G
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 370 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 210 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 87 ns
Cossⓘ - Выходная емкость: 820 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm
Тип корпуса: TO220AB
Аналог (замена) для IRFB3077G
IRFB3077G Datasheet (PDF)
irfb3077gpbf.pdf
PD - 96200IRFB3077GPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8ml Hard Switched and High Frequency Circuits max. 3.3mBenefitsGl Worldwide Best RDS(on) in TO-220ID (Silicon Limited) 210A l Improved Gate, Avalanche and Dynamic dV/dtID (P
irfb3077pbf.pdf
PD - 97047BIRFB3077PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8m:l Hard Switched and High Frequency Circuitsmax. 3.3m:BenefitsGl Worldwide Best RDS(on) in TO-220ID (Silicon Limited)210A cl Improved Gate, Avalanche and Dynamic dV/
irfb3077.pdf
80V N-Channel Power MOSFETDESCRIPTIONThe IRFB3077 uses advanced trench technology toprovide excellent R , low gate charge. It can be usedDS(ON)in a wide variety of applications.KEY CHARACTERISTICS V = 80V,I = 200A R
irfb3077.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3077IIRFB3077FEATURESStatic drain-source on-resistance:RDS(on) 3.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
Другие MOSFET... IRFB23N15D , IRFB23N20D , IRFB260N , IRFB3004 , IRFB3004G , IRFB3006 , IRFB3006G , IRFB3077 , P60NF06 , IRFB31N20D , IRFB3206 , IRFB3206G , IRFB3207 , IRFB3207Z , IRFB3207ZG , IRFB3256 , IRFB3306 .
Список транзисторов
Обновления
MOSFET: AGM1030MA | AGM1010A-F | AGM1010A-E | AGM1010A2 | AGM08T15C | AGM085N10F | AGM085N10C1 | AGM085N10C | AGM065N10D | AGM065N10C | AGM056N10H | AGM056N10C | AGM056N10A | AGM056N08C | AGM042N10D | AGM10N15D
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