IRFB3207Z Datasheet. Specs and Replacement

Type Designator: IRFB3207Z  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 170 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 68 nS

Cossⓘ - Output Capacitance: 600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm

Package: TO220AB

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IRFB3207Z substitution

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IRFB3207Z datasheet

 ..1. Size:330K  international rectifier
irfb3207zpbf irfs3207zpbf irfsl3207zpbf.pdf pdf_icon

IRFB3207Z

IRFB3207ZPbF IRFS3207ZPbF IRFSL3207ZPbF HEXFET Power MOSFET Applications D VDSS 75V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 3.3m l Uninterruptible Power Supply max. 4.1m G l High Speed Power Switching ID (Silicon Limited) 170A l Hard Switched and High Frequency Circuits S ID (Package Limited) 120A Benefits D D l Improved Gate, Avalanche and Dynamic... See More ⇒

 ..2. Size:246K  inchange semiconductor
irfb3207z.pdf pdf_icon

IRFB3207Z

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3207Z IIRFB3207Z FEATURES Static drain-source on-resistance RDS(on) 4.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIM... See More ⇒

 0.1. Size:286K  international rectifier
irfb3207zgpbf.pdf pdf_icon

IRFB3207Z

PD - 96201 IRFB3207ZGPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS D VDSS 75V l Uninterruptible Power Supply RDS(on) typ. 3.3m l High Speed Power Switching max. 4.1m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 170A ID (Package Limited) S 120A Benefits D l Improved Gate, Avalanche and Dynamic dv/dt Ruggednes... See More ⇒

 0.2. Size:245K  inchange semiconductor
irfb3207zg.pdf pdf_icon

IRFB3207Z

isc N-Channel MOSFET Transistor IRFB3207ZG IIRFB3207ZG FEATURES Static drain-source on-resistance RDS(on) 4.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

Detailed specifications: IRFB3006, IRFB3006G, IRFB3077, IRFB3077G, IRFB31N20D, IRFB3206, IRFB3206G, IRFB3207, IRFZ24N, IRFB3207ZG, IRFB3256, IRFB3306, IRFB3306G, IRFB3307, IRFB3307Z, IRFB3307ZG, IRFB33N15D

Keywords - IRFB3207Z MOSFET specs

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