IRFB3207Z MOSFET: N-Ch, 75V, 170A. Full datasheet with pinout, specifications and replacement transistor list

..1. Size:330K international rectifier
irfb3207zpbf irfs3207zpbf irfsl3207zpbf.pdf pdf_icon

IRFB3207ZPbF IRFS3207ZPbF IRFSL3207ZPbF HEXFET Power MOSFET Applications D VDSS 75V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 3.3m l Uninterruptible Power Supply max. 4.1m G l High Speed Power Switching ID (Silicon Limited) 170A l Hard Switched and High Frequency Circuits S ID (Package Limited) 120A Benefits D D l Improved Gate, Avalanche and Dynamic... See More ⇒

..2. Size:246K inchange semiconductor
irfb3207z.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3207Z IIRFB3207Z FEATURES Static drain-source on-resistance RDS(on) 4.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIM... See More ⇒

0.1. Size:286K international rectifier
irfb3207zgpbf.pdf pdf_icon

PD - 96201 IRFB3207ZGPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS D VDSS 75V l Uninterruptible Power Supply RDS(on) typ. 3.3m l High Speed Power Switching max. 4.1m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 170A ID (Package Limited) S 120A Benefits D l Improved Gate, Avalanche and Dynamic dv/dt Ruggednes... See More ⇒

0.2. Size:245K inchange semiconductor
irfb3207zg.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFB3207ZG IIRFB3207ZG FEATURES Static drain-source on-resistance RDS(on) 4.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

6.1. Size:379K international rectifier
irfb3207 irfs3207 irfsl3207.pdf pdf_icon

PD - 96893C IRFB3207 IRFS3207 IRFSL3207 Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching 3.6m RDS(on) typ. l Hard Switched and High Frequency Circuits G Benefits max. 4.5m l Worldwide Best RDS(on) in TO-220 S ID 180A l Improved Gate, Avalanche and Dynamic dV/dt Ruggedn... See More ⇒

6.2. Size:282K international rectifier
auirfb3207.pdf pdf_icon

PD - 96322 AUTOMOTIVE GRADE AUIRFB3207 HEXFET Power MOSFET Features D V(BR)DSS 75V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 3.6m l 175 C Operating Temperature max. 4.5m G l Fast Switching ID (Silicon Limited) 170A l Repetitive Avalanche Allowed up to Tjmax S l Lead-Free, RoHS Compliant ID (Package Limited) 75A l Automotive Qualified * ... See More ⇒

6.3. Size:387K international rectifier
irfb3207pbf.pdf pdf_icon

PD - 95708D IRFB3207PbF IRFS3207PbF IRFSL3207PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 3.6m G max. 4.5m Benefits S ID 170A l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized ... See More ⇒

6.4. Size:246K inchange semiconductor
irfb3207.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3207 IIRFB3207 FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMU... See More ⇒

IRFB3207Z Datasheet (PDF)

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