All MOSFET. IRFB3207Z Datasheet

 

IRFB3207Z MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFB3207Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 170 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 120 nC
   trⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm
   Package: TO220AB

 IRFB3207Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFB3207Z Datasheet (PDF)

 ..1. Size:326K  international rectifier
 irfb3207zpbf irfs3207zpbf irfsl3207zpbf.pdf

IRFB3207Z IRFB3207Z

IRFB3207ZPbFIRFS3207ZPbFIRFSL3207ZPbFHEXFET Power MOSFETApplicationsDVDSS 75Vl High Efficiency Synchronous Rectification inSMPS RDS(on) typ. 3.3ml Uninterruptible Power Supply max. 4.1mGl High Speed Power SwitchingID (Silicon Limited) 170Al Hard Switched and High Frequency CircuitsS ID (Package Limited) 120ABenefitsDDl Improved Gate, Avalanche and Dynamic

 ..2. Size:330K  infineon
 irfb3207zpbf irfs3207zpbf irfsl3207zpbf.pdf

IRFB3207Z IRFB3207Z

IRFB3207ZPbFIRFS3207ZPbFIRFSL3207ZPbFHEXFET Power MOSFETApplicationsDVDSS 75Vl High Efficiency Synchronous Rectification inSMPS RDS(on) typ. 3.3ml Uninterruptible Power Supply max. 4.1mGl High Speed Power SwitchingID (Silicon Limited) 170Al Hard Switched and High Frequency CircuitsS ID (Package Limited) 120ABenefitsDDl Improved Gate, Avalanche and Dynamic

 ..3. Size:246K  inchange semiconductor
 irfb3207z.pdf

IRFB3207Z IRFB3207Z

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3207ZIIRFB3207ZFEATURESStatic drain-source on-resistance:RDS(on) 4.1mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM

 0.1. Size:286K  international rectifier
 irfb3207zgpbf.pdf

IRFB3207Z IRFB3207Z

PD - 96201IRFB3207ZGPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification inSMPSDVDSS 75Vl Uninterruptible Power SupplyRDS(on) typ. 3.3ml High Speed Power Switching max. 4.1ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 170AID (Package Limited)S 120ABenefitsDl Improved Gate, Avalanche and Dynamicdv/dt Ruggednes

 0.2. Size:245K  inchange semiconductor
 irfb3207zg.pdf

IRFB3207Z IRFB3207Z

isc N-Channel MOSFET Transistor IRFB3207ZGIIRFB3207ZGFEATURESStatic drain-source on-resistance:RDS(on) 4.1mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 6.1. Size:282K  international rectifier
 auirfb3207.pdf

IRFB3207Z IRFB3207Z

PD - 96322AUTOMOTIVE GRADEAUIRFB3207HEXFET Power MOSFETFeaturesD V(BR)DSS75Vl Advanced Process Technologyl Ultra Low On-Resistance RDS(on) typ.3.6ml 175C Operating Temperaturemax. 4.5mGl Fast SwitchingID (Silicon Limited)170A l Repetitive Avalanche Allowed up to TjmaxSl Lead-Free, RoHS CompliantID (Package Limited)75A l Automotive Qualified *

 6.2. Size:387K  international rectifier
 irfb3207pbf.pdf

IRFB3207Z IRFB3207Z

PD - 95708DIRFB3207PbFIRFS3207PbFIRFSL3207PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 75Vl High Speed Power Switchingl Hard Switched and High Frequency Circuits RDS(on) typ. 3.6mG max. 4.5mBenefitsSID 170Al Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

 6.3. Size:379K  infineon
 irfb3207 irfs3207 irfsl3207.pdf

IRFB3207Z IRFB3207Z

PD - 96893CIRFB3207IRFS3207IRFSL3207ApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 75Vl High Speed Power Switching3.6mRDS(on) typ.l Hard Switched and High Frequency CircuitsGBenefits max. 4.5ml Worldwide Best RDS(on) in TO-220SID 180Al Improved Gate, Avalanche and Dynamic dV/dtRuggedn

 6.4. Size:246K  inchange semiconductor
 irfb3207.pdf

IRFB3207Z IRFB3207Z

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3207 IIRFB3207FEATURESStatic drain-source on-resistance:RDS(on) 4.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NVD5C688NL

 

 
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