BF966 Datasheet and Replacement

   Type Designator: BF966
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8.5 V
   |Id| ⓘ - Maximum Drain Current: 0.03 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 2.6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
   Package: SOT103

 BF966 Transistor Equivalent Substitute - MOSFET Cross-Reference Search