All MOSFET. IRFB3307ZG Datasheet

 

IRFB3307ZG Datasheet and Replacement


   Type Designator: IRFB3307ZG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 128 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: TO220AB

 IRFB3307ZG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFB3307ZG Datasheet (PDF)

 ..1. Size:243K  international rectifier
 irfb3307zgpbf.pdf pdf_icon

IRFB3307ZG

PD - 96212A IRFB3307ZGPbF Applications l High Efficiency Synchronous Rectification in HEXFET Power MOSFET SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. l Hard Switched and High Frequency Circuits 4.6m max. 5.8m G ID (Silicon Limited) 128A Benefits S ID (Package Limited) 120A l Improved Gate, Avalanche and Dynamic dv/dt Rugg... See More ⇒

 5.1. Size:316K  international rectifier
 irfb3307zpbf irfs3307zpbf irfs3307ztrlpbf irfsl3307zpbf.pdf pdf_icon

IRFB3307ZG

PD - 97214D IRFB3307ZPbF IRFS3307ZPbF Applications IRFSL3307ZPbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 4.6m max. 5.8m G ID (Silicon Limited) 128A Benefits ID (Package Limited) 120A S l Improved Gate, Av... See More ⇒

 5.2. Size:316K  international rectifier
 irfb3307zpbf irfs3307zpbf irfsl3307zpbf.pdf pdf_icon

IRFB3307ZG

PD - 97214D IRFB3307ZPbF IRFS3307ZPbF Applications IRFSL3307ZPbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 4.6m max. 5.8m G ID (Silicon Limited) 128A Benefits ID (Package Limited) 120A S l Improved Gate, Av... See More ⇒

 5.3. Size:246K  inchange semiconductor
 irfb3307z.pdf pdf_icon

IRFB3307ZG

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3307Z IIRFB3307Z FEATURES Static drain-source on-resistance RDS(on) 5.8m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXI... See More ⇒

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Datasheet: IRFB3207 , IRFB3207Z , IRFB3207ZG , IRFB3256 , IRFB3306 , IRFB3306G , IRFB3307 , IRFB3307Z , K2611 , IRFB33N15D , IRFB3507 , IRFB3607 , IRFB3607G , IRFB3806 , IRFB38N20D , IRFB4019 , IRFB4020 .

Keywords - IRFB3307ZG MOSFET datasheet

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