IRFB4110 Datasheet. Specs and Replacement
The IRFB4110 is a high-performance N-channel MOSFET designed for fast switching and high-current applications. It features a low RDS(on) of 4.5mΩ, enabling efficient power handling and minimal heat generation. With a VDS rating of 100V and continuous drain current up to 180A (120A Wire Bond Limited), it suits motor drives, power supplies, inverters. Its robust gate charge ensures rapid switching, reducing losses in high-frequency circuits. The TO220 package provides excellent thermal dissipation. IRFB4110 combines high efficiency, reliability, compact design for demanding power electronics.
Type Designator: IRFB4110 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 370 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 67 nS
Cossⓘ - Output Capacitance: 670 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO220AB
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IRFB4110 datasheet
irfb4110pbf.pdf
IRFB4110PbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 3.7m l High Speed Power Switching max. 4.5m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 180A S ID (Package Limited) 120A Benefits l Improved Gate, Avalanche and Dynamic dv/dt D Ruggedness ... See More ⇒
irfb4110.pdf
IRFB4110 100 V N-Channel MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA D l Enhanced body diode dV/dt and dI/dt Capability l Lead Free l... See More ⇒
irfb4110.pdf
100V N-Channel Power MOSFET DESCRIPTION The IRFB4110 uses advanced trench technology to provide excellent R , low gate charge. It can be DS(ON) used in a wide variety of applications. KEY CHARACTERISTICS V = 100V,I = 180A R ... See More ⇒
irfb4110.pdf
isc N-Channel MOSFET Transistor IRFB4110 IIRFB4110 FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S... See More ⇒
Detailed specifications: IRFB33N15D, IRFB3507, IRFB3607, IRFB3607G, IRFB3806, IRFB38N20D, IRFB4019, IRFB4020, IRF730, IRFB4110G, IRFB4110Q, IRFB4115, IRFB4115G, IRFB4127, IRFB41N15D, IRFB4212, IRFB4227
Keywords - IRFB4110 MOSFET specs
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