All MOSFET. IRFB4110 Datasheet

 

IRFB4110 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFB4110
   Marking Code: IRF4110
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 370 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 180 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 150 nC
   trⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 670 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO220AB

 IRFB4110 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFB4110 Datasheet (PDF)

 ..1. Size:237K  international rectifier
irfb4110pbf.pdf

IRFB4110 IRFB4110

PD - 97061DIRFB4110PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply VDSS 100Vl High Speed Power SwitchingRDS(on) typ.3.7ml Hard Switched and High Frequency Circuits max. 4.5mID (Silicon Limited)180A ID (Package Limited)120ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtRuggednessDDl

 ..2. Size:341K  infineon
irfb4110pbf.pdf

IRFB4110 IRFB4110

IRFB4110PbFHEXFET Power MOSFETApplicationsDVDSS 100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply3.7ml High Speed Power Switching max.4.5ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 180A S ID (Package Limited)120ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtDRuggedness

 ..3. Size:245K  inchange semiconductor
irfb4110.pdf

IRFB4110 IRFB4110

isc N-Channel MOSFET Transistor IRFB4110IIRFB4110FEATURESStatic drain-source on-resistance:RDS(on) 4.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

 0.1. Size:303K  international rectifier
irfb4110gpbf.pdf

IRFB4110 IRFB4110

PD - 96214IRFB4110GPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply VDSS 100Vl High Speed Power SwitchingRDS(on) typ.3.7ml Hard Switched and High Frequency Circuits max. 4.5mID (Silicon Limited)180A ID (Package Limited)120ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtRuggednessD Dl

 0.2. Size:306K  international rectifier
irfb4110qpbf.pdf

IRFB4110 IRFB4110

PD - 96138IRFB4110QPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyVDSS 100Vl High Speed Power SwitchingRDS(on) typ.3.7ml Hard Switched and High Frequency Circuitsl Lead-Free max4.5mID180ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtDRuggednessDl Fully Characterized Capacitance an

 0.3. Size:245K  inchange semiconductor
irfb4110g.pdf

IRFB4110 IRFB4110

isc N-Channel MOSFET Transistor IRFB4110G IIRFB4110GFEATURESStatic drain-source on-resistance:RDS(on) 4.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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