IRFB4110G Datasheet. Specs and Replacement

Type Designator: IRFB4110G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 370 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 67 nS

Cossⓘ - Output Capacitance: 670 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO220AB

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IRFB4110G substitution

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IRFB4110G datasheet

 ..1. Size:303K  international rectifier
 irfb4110gpbf.pdf pdf_icon

IRFB4110G

PD - 96214 IRFB4110GPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m l Hard Switched and High Frequency Circuits max. 4.5m ID (Silicon Limited) 180A ID (Package Limited) 120A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D D l ... See More ⇒

 ..2. Size:245K  inchange semiconductor
 irfb4110g.pdf pdf_icon

IRFB4110G

isc N-Channel MOSFET Transistor IRFB4110G IIRFB4110G FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒

 6.1. Size:341K  international rectifier
 irfb4110pbf.pdf pdf_icon

IRFB4110G

IRFB4110PbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 3.7m l High Speed Power Switching max. 4.5m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 180A S ID (Package Limited) 120A Benefits l Improved Gate, Avalanche and Dynamic dv/dt D Ruggedness ... See More ⇒

 6.2. Size:306K  international rectifier
 irfb4110qpbf.pdf pdf_icon

IRFB4110G

PD - 96138 IRFB4110QPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m l Hard Switched and High Frequency Circuits l Lead-Free max 4.5m ID 180A Benefits l Improved Gate, Avalanche and Dynamic dv/dt D Ruggedness D l Fully Characterized Capacitance an... See More ⇒

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Detailed specifications: IRFB3507, IRFB3607, IRFB3607G, IRFB3806, IRFB38N20D, IRFB4019, IRFB4020, IRFB4110, IRF3205, IRFB4110Q, IRFB4115, IRFB4115G, IRFB4127, IRFB41N15D, IRFB4212, IRFB4227, IRFB4229

Keywords - IRFB4110G MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.