All MOSFET. IRFB4410ZG Datasheet

 

IRFB4410ZG MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFB4410ZG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 230 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 97 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 83 nC
   Rise Time (tr): 52 nS
   Drain-Source Capacitance (Cd): 340 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm
   Package: TO220AB

 IRFB4410ZG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFB4410ZG Datasheet (PDF)

 ..1. Size:294K  international rectifier
irfb4410zgpbf.pdf

IRFB4410ZG
IRFB4410ZG

PD - 96213IRFB4410ZGPbFHEXFET Power MOSFETDApplicationsVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply 7.2ml High Speed Power SwitchingG max. 9.0ml Hard Switched and High Frequency CircuitsID (Silicon Limited)97ASBenefitsDl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized C

 ..2. Size:245K  inchange semiconductor
irfb4410zg.pdf

IRFB4410ZG
IRFB4410ZG

isc N-Channel MOSFET Transistor IRFB4410ZGIIRFB4410ZGFEATURESStatic drain-source on-resistance:RDS(on) 9.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 5.1. Size:330K  international rectifier
irfb4410zpbf irfs4410zpbf irfsl4410zpbf.pdf

IRFB4410ZG
IRFB4410ZG

IRFB4410ZPbFIRFS4410ZPbFIRFSL4410ZPbFHEXFET Power MOSFETApplicationsDVDSSl High Efficiency Synchronous Rectification in SMPS 100Vl Uninterruptible Power SupplyRDS(on) typ.7.2ml High Speed Power SwitchingG max. 9.0ml Hard Switched and High Frequency CircuitsID (Silicon Limited)97ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessDl

 5.2. Size:330K  infineon
irfb4410zpbf irfs4410zpbf irfsl4410zpbf.pdf

IRFB4410ZG
IRFB4410ZG

IRFB4410ZPbFIRFS4410ZPbFIRFSL4410ZPbFHEXFET Power MOSFETApplicationsDVDSSl High Efficiency Synchronous Rectification in SMPS 100Vl Uninterruptible Power SupplyRDS(on) typ.7.2ml High Speed Power SwitchingG max. 9.0ml Hard Switched and High Frequency CircuitsID (Silicon Limited)97ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessDl

 5.3. Size:251K  inchange semiconductor
irfb4410z.pdf

IRFB4410ZG
IRFB4410ZG

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4410ZIIRFB4410ZFEATURESStatic drain-source on-resistance:RDS(on) 9.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM

Datasheet: IRFB4310G , IRFB4310Z , IRFB4310ZG , IRFB4321 , IRFB4321G , IRFB4332 , IRFB4410 , IRFB4410Z , IRF640N , IRFB4610 , IRFB4615 , IRFB4620 , IRFB4710 , IRFB52N15D , IRFB5615 , IRFB5620 , IRFB59N10D .

 

 
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