IRFB61N15D Datasheet and Replacement
Type Designator: IRFB61N15D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 330 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 95 nC
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 690 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO220AB
IRFB61N15D substitution
IRFB61N15D Datasheet (PDF)
irfb61n15d.pdf

PD- 94207SMPS MOSFETIRFB61N15DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters150V 0.032 60A Motor Control Uninterrutible Power SuppliesBenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Vo
irfb61n15dpbf.pdf

PD- 95621SMPS MOSFETIRFB61N15DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters150V 0.032 60Al Motor Controll Uninterrutible Power Suppliesl Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Char
irfb61n15d.pdf

isc N-Channel MOSFET Transistor IRFB61N15DIIRFB61N15DFEATURESStatic drain-source on-resistance:RDS(on) 32mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersUninterruptible Power SuppliesABSOLUTE MAXIMUM RATINGS(T =2
Datasheet: IRFB4610 , IRFB4615 , IRFB4620 , IRFB4710 , IRFB52N15D , IRFB5615 , IRFB5620 , IRFB59N10D , 2N7000 , IRFB812 , IRFBA1404P , IRFBA1405P , IRFBA90N20D , IRFH3702 , IRFH3707 , IRFH5004 , IRFH5006 .
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