IRFH5025 PDF and Equivalents Search

 

IRFH5025 Specs and Replacement

Type Designator: IRFH5025

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.3 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: PQFN5X6

IRFH5025 substitution

- MOSFET ⓘ Cross-Reference Search

 

IRFH5025 datasheet

 ..1. Size:272K  international rectifier
 irfh5025pbf.pdf pdf_icon

IRFH5025

IRFH5025PbF HEXFET Power MOSFET VDS 250 V RDS(on) max 100 m (@VGS = 10V) Qg (typical) 37 nC RG (typical) 1.6 ID 25 A PQFN 5X6 mm (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses Low Th... See More ⇒

 7.1. Size:260K  1
 irfh5020trpbf.pdf pdf_icon

IRFH5025

IRFH5020PbF HEXFET Power MOSFET VDS 200 V RDS(on) max 55 m (@VGS = 10V) Qg (typical) 36 nC RG (typical) 1.9 ID 34 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses Low The... See More ⇒

 7.2. Size:341K  international rectifier
 irfh5020pbf.pdf pdf_icon

IRFH5025

PD -97428 IRFH5020PbF HEXFET Power MOSFET VDS 200 V RDS(on) max 55 m (@VGS = 10V) Qg (typical) 36 nC RG (typical) 1.9 ID 43 A PQFN 5X6 mm (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses ... See More ⇒

 8.1. Size:263K  1
 irfh5006trpbf.pdf pdf_icon

IRFH5025

IRFH5006PbF HEXFET Power MOSFET VDS 60 V RDS(on) max 4.1 m (@VGS = 10V) Qg (typical) 69 nC RG (typical) 1.2 ID 100 A (@Tmb = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon ( 4.1m ) Lower Conduction Losses ... See More ⇒

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Detailed specifications: IRFH3702, IRFH3707, IRFH5004, IRFH5006, IRFH5007, IRFH5010, IRFH5015, IRFH5020, K4145, IRFH5053, IRFH5104, IRFH5106, IRFH5110, IRFH5204, IRFH5206, IRFH5207, IRFH5210

Keywords - IRFH5025 MOSFET specs

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