IRFH5025 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFH5025
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 3.6 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3.8 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 37 nC
trⓘ - Время нарастания: 6.3 ns
Cossⓘ - Выходная емкость: 150 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
Тип корпуса: PQFN5X6
IRFH5025 Datasheet (PDF)
irfh5025pbf.pdf
IRFH5025PbFHEXFET Power MOSFETVDS 250 VRDS(on) max 100 m(@VGS = 10V)Qg (typical) 37 nCRG (typical) 1.6 ID 25 APQFN 5X6 mm(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon Lower Conduction LossesLow Th
irfh5020trpbf.pdf
IRFH5020PbFHEXFET Power MOSFETVDS 200 VRDS(on) max 55 m(@VGS = 10V)Qg (typical) 36 nCRG (typical) 1.9 ID 34 A(@Tc(Bottom) = 25C)PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon Lower Conduction LossesLow The
irfh5020pbf.pdf
PD -97428IRFH5020PbFHEXFET Power MOSFETVDS200 VRDS(on) max 55 m(@VGS = 10V)Qg (typical) 36nCRG (typical) 1.9ID 43 APQFN 5X6 mm(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon Lower Conduction Losses
irfh5006trpbf.pdf
IRFH5006PbFHEXFET Power MOSFETVDS 60 VRDS(on) max 4.1 m(@VGS = 10V)Qg (typical) 69 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C)PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 4.1m) Lower Conduction Losses
irfh5010trpbf.pdf
IRFH5010PbFHEXFET Power MOSFETVDS100 VRDS(on) max 9.0 m(@VGS = 10V)Qg (typical)67nCRG (typical)1.2ID PQFN 5X6 mm100 A(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick ApplicationsFeatures and BenefitsBenefitsFeaturesLow RDSon (
irfh5010pbf.pdf
PD -96297IRFH5010PbFHEXFET Power MOSFETVDS100 VRDS(on) max 9.0 m(@VGS = 10V)Qg (typical)65nCRG (typical)1.2ID PQFN 5X6 mm100 A(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick ApplicationsFeatures and BenefitsBenefitsFeaturesLow RDSon (
irfh5015pbf.pdf
PD - 97446IRFH5015PbFHEXFET Power MOSFETVDS150 VRDS(on) max 31 m(@VGS = 10V)Qg (typical)33nCRG (typical)1.7ID PQFN 5X6 mm56 A(@Tc(Bottom) = 25C)Applications Primary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon (
irfh5004pbf.pdf
IRFH5004PbFHEXFET Power MOSFETVDS 40 VRDS(on) max 2.6 m(@VGS = 10V)Qg (typical) 73 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C) PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 2.6m) Lower Conduction LossesL
irfh5006pbf.pdf
IRFH5006PbFHEXFET Power MOSFETVDS 60 VRDS(on) max 4.1 m(@VGS = 10V)Qg (typical) 69 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C)PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 4.1m) Lower Conduction Losses
irfh5007pbf.pdf
PD -95958IRFH5007PbFHEXFET Power MOSFETVDS75 VRDS(on) max 5.9 m(@VGS = 10V)Qg (typical)65nCRG (typical)1.2ID 100 APQFN 5X6 mm(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 5.9m)
irfh5053pbf.pdf
PD - 97359IRFH5053PbFApplicationsHEXFET Power MOSFETl 3 Phase Boost Converter ApplicationsVDSS RDS(on) maxQgl Secondary Side Synchronous Rectification18m100V @VGS = 10V24nCBenefitsSl Very low RDS(ON) at 10V VGSSl Low Gate ChargeDSl Fully Characterized Avalanche Voltage andDG CurrentDl 100% Tested for RGDl Lead-Free (Qualified up to 260C R
irfh5010pbf.pdf
IRFH5010PbFHEXFET Power MOSFETVDS100 VRDS(on) max 9.0 m(@VGS = 10V)Qg (typical)67nCRG (typical)1.2ID PQFN 5X6 mm100 A(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick ApplicationsFeatures and BenefitsBenefitsFeaturesLow RDSon (
irfh5015pbf.pdf
IRFH5015PbFHEXFET Power MOSFETVDS 150 VRDS(on) max 31 m(@VGS = 10V)Qg (typical) 36 nCRG (typical) 1.7 ID PQFN 5X6 mm44 A(@Tmb = 25C)Applications Primary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon (
irfh5004pbf.pdf
IRFH5004PbFHEXFET Power MOSFETVDS 40 VRDS(on) max 2.6 m(@VGS = 10V)Qg (typical) 73 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C) PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 2.6m) Lower Conduction LossesL
irfh5006pbf.pdf
IRFH5006PbFHEXFET Power MOSFETVDS 60 VRDS(on) max 4.1 m(@VGS = 10V)Qg (typical) 69 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C)PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 4.1m) Lower Conduction Losses
irfh5007pbf.pdf
IRFH5007PbFHEXFET Power MOSFETVDS 75 VRDS(on) max 5.9 m(@VGS = 10V)Qg (typical) 65 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C)PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 5.9m) Lower Conduction Losses
irfh5053pbf.pdf
PD - 97359IRFH5053PbFApplicationsHEXFET Power MOSFETl 3 Phase Boost Converter ApplicationsVDSS RDS(on) maxQgl Secondary Side Synchronous Rectification18m100V @VGS = 10V24nCBenefitsSl Very low RDS(ON) at 10V VGSSl Low Gate ChargeDSl Fully Characterized Avalanche Voltage andDG CurrentDl 100% Tested for RGDl Lead-Free (Qualified up to 260C R
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: MMQ60R115PCTH
History: MMQ60R115PCTH
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918