IRFH6200 MOSFET Datasheet: N-Ch, 20V, 49A. Full specification with pinout and replacement list

IRFH6200 Specs and Replacement

Type Designator: IRFH6200

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 49 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 74 nS

Cossⓘ - Output Capacitance: 2890 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00099 Ohm

Package: PQFN5X6

IRFH6200 substitution

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IRFH6200 datasheet

..1. Size:215K international rectifier
irfh6200pbf.pdf pdf_icon

IRFH6200TRPbF HEXFET Power MOSFET VDS 20 V RDS(on) max 0.99 m (@VGS = 4.5V) Qg (typical) 155 nC RG (typical) 1.3 ID 100 A PQFN 5X6 mm (@Tmb = 25 C) Applications Charge and discharge switch for battery application Load switch for 12V (typical) bus Features and Benefits Features Benefits Low RDSon ( 0.99m Lower Conduction Losses Low Thermal ... See More ⇒

0.1. Size:264K 1
irfh6200trpbf.pdf pdf_icon

IRFH6200TRPbF HEXFET Power MOSFET VDS 20 V RDS(on) max 0.99 m (@VGS = 4.5V) (@VGS = 2.5V) 1.50 Qg (typical) 155 nC RG (typical) 1.3 ID 100 A (@Tmb = 25 C) PQFN 5X6 mm Applications Charge and discharge switch for battery application Load switch for 12V (typical) bus Hot-Swap Switch Features Benefits Low RDSon ( 0.99m ) Lower Conduction Losses Low The... See More ⇒

0.2. Size:264K international rectifier
irfh6200trpbf.pdf pdf_icon