IRFH6200 Datasheet and Replacement
Type Designator: IRFH6200
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
|Id| ⓘ - Maximum Drain Current: 49 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 155 nC
tr ⓘ - Rise Time: 74 nS
Cossⓘ - Output Capacitance: 2890 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00099 Ohm
Package: PQFN5X6
IRFH6200 substitution
IRFH6200 Datasheet (PDF)
irfh6200pbf.pdf

IRFH6200TRPbFHEXFET Power MOSFETVDS 20 VRDS(on) max 0.99 m(@VGS = 4.5V)Qg (typical) 155 nCRG (typical) 1.3 ID 100 A PQFN 5X6 mm(@Tmb = 25C)ApplicationsCharge and discharge switch for battery applicationLoad switch for 12V (typical) busFeatures and BenefitsFeatures BenefitsLow RDSon ( 0.99m Lower Conduction LossesLow Thermal
irfh6200trpbf.pdf

IRFH6200TRPbFHEXFET Power MOSFETVDS 20 VRDS(on) max 0.99m(@VGS = 4.5V)(@VGS = 2.5V) 1.50Qg (typical) 155 nCRG (typical) 1.3 ID 100 A(@Tmb = 25C)PQFN 5X6 mmApplications Charge and discharge switch for battery application Load switch for 12V (typical) bus Hot-Swap SwitchFeatures BenefitsLow RDSon ( 0.99m) Lower Conduction LossesLow The
irfh6200trpbf.pdf

IRFH6200TRPbFHEXFET Power MOSFETVDS 20 VRDS(on) max 0.99m(@VGS = 4.5V)(@VGS = 2.5V) 1.50Qg (typical) 155 nCRG (typical) 1.3 ID 100 A(@Tmb = 25C)PQFN 5X6 mmApplications Charge and discharge switch for battery application Load switch for 12V (typical) bus Hot-Swap SwitchFeatures BenefitsLow RDSon ( 0.99m) Lower Conduction LossesLow The
Datasheet: IRFH5300 , IRFH5301 , IRFH5302 , IRFH5302D , IRFH5303 , IRFH5304 , IRFH5306 , IRFH5406 , 13N50 , IRFH7914 , IRFH7921 , IRFH7932 , IRFH7934 , IRFH7936 , IRFH8318 , IRFH8324 , IRFH8325 .
Keywords - IRFH6200 MOSFET datasheet
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