IRFHM830 PDF and Equivalents Search

 

IRFHM830 Specs and Replacement

Type Designator: IRFHM830

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm

Package: PQFN3.3X3.3

IRFHM830 substitution

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IRFHM830 datasheet

 ..1. Size:532K  international rectifier
 irfhm830pbf.pdf pdf_icon

IRFHM830

IRFHM830PbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 3.8 m (@ VGS = 10V) Qg (typical) 15 nC Rg (typical) 2.5 ID 40 A (@TC (Bottom) = 25 C) PQFN 3.3 x 3.3 mm Applications Battery Operated DC Motor Inverter MOSFET Features Benefits Low RDSon (... See More ⇒

 0.1. Size:532K  1
 irfhm830trpbf.pdf pdf_icon

IRFHM830

IRFHM830PbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 3.8 m (@ VGS = 10V) Qg (typical) 15 nC Rg (typical) 2.5 ID 40 A (@TC (Bottom) = 25 C) PQFN 3.3 x 3.3 mm Applications Battery Operated DC Motor Inverter MOSFET Features Benefits Low RDSon (... See More ⇒

 0.2. Size:243K  international rectifier
 irfhm830d.pdf pdf_icon

IRFHM830

PD -96327A IRFHM830DPbF HEXFET Power MOSFET VDS 30 V RDS(on) max D 5 4 G 4.3 m (@VGS = 10V) D 6 3 S Qg (typical) 13 nC D 7 2 S RG (typical) 1.1 D 8 1 S ID 40 A 3.3mm x 3.3mm PQFN (@Tc(Bottom) = 25 C) Applications Synchronous MOSFET for Buck Converters Features and Benefits Features Benefits Low RDSon ( 4.3m ) Lower Conduction Losses Schottky intrin... See More ⇒

 0.3. Size:243K  international rectifier
 irfhm830dpbf.pdf pdf_icon

IRFHM830

PD -96327A IRFHM830DPbF HEXFET Power MOSFET VDS 30 V RDS(on) max D 5 4 G 4.3 m (@VGS = 10V) D 6 3 S Qg (typical) 13 nC D 7 2 S RG (typical) 1.1 D 8 1 S ID 40 A 3.3mm x 3.3mm PQFN (@Tc(Bottom) = 25 C) Applications Synchronous MOSFET for Buck Converters Features and Benefits Features Benefits Low RDSon ( 4.3m ) Lower Conduction Losses Schottky intrin... See More ⇒

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Detailed specifications: IRFH7934, IRFH7936, IRFH8318, IRFH8324, IRFH8325, IRFH8330, IRFH8334, IRFH8337, P60NF06, IRFHM830D, IRFHM831, IRFHS8242, IRFHS8342, IRFI4110G, IRFI4227, IRFI4229, IRFI4321

Keywords - IRFHM830 MOSFET specs

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