BF990 Datasheet and Replacement
Type Designator: BF990
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 18 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
|Id| ⓘ - Maximum Drain Current: 0.03 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 3 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
Package: SOT143
BF990 substitution
BF990 Datasheet (PDF)
bf990a 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF990AN-channel dual-gate MOS-FETApril 1991Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF990AFEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143integrated back-to-back d
bf990a.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF990AN-channel dual-gate MOS-FETApril 1991Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF990AFEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143integrated back-to-back d
Datasheet: BF966S , BF980 , BF980A , BF981 , BF982 , BF988 , BF989 , BF989S , 8N60 , BF990A , BF991 , BF992 , BF992R , BF993 , BF994 , BF994S , BF994SR .
History: AO4447 | BUK555-100B
Keywords - BF990 MOSFET datasheet
BF990 cross reference
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History: AO4447 | BUK555-100B
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