BF991 Datasheet. Specs and Replacement
Type Designator: BF991 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
|Id| ⓘ - Maximum Drain Current: 0.02 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 2.1 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
Package: TO253
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BF991 datasheet
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DISCRETE SEMICONDUCTORS DATA SHEET BF991 N-channel dual-gate MOS-FET April 1991 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF991 FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back dio... See More ⇒
bf991.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BF991 N-channel dual-gate MOS-FET April 1991 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF991 FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back dio... See More ⇒
Detailed specifications: BF980A, BF981, BF982, BF988, BF989, BF989S, BF990, BF990A, K2611, BF992, BF992R, BF993, BF994, BF994S, BF994SR, BF995, BF996
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