BF991 Datasheet and Replacement
Type Designator: BF991
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
|Id|ⓘ - Maximum Drain Current: 0.02 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 2.1 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
Package: TO253
- MOSFET Cross-Reference Search
BF991 Datasheet (PDF)
bf991 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF991N-channel dual-gate MOS-FETApril 1991Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF991FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143integrated back-to-back dio
bf991.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF991N-channel dual-gate MOS-FETApril 1991Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF991FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143integrated back-to-back dio
Datasheet: BF980A , BF981 , BF982 , BF988 , BF989 , BF989S , BF990 , BF990A , 5N65 , BF992 , BF992R , BF993 , BF994 , BF994S , BF994SR , BF995 , BF996 .
History: IRFI7536G | WMM11N80M3 | FDMS9620S
Keywords - BF991 MOSFET datasheet
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History: IRFI7536G | WMM11N80M3 | FDMS9620S
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