All MOSFET. IRFP3206 Datasheet

 

IRFP3206 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFP3206
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 200 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 120 nC
   trⓘ - Rise Time: 82 nS
   Cossⓘ - Output Capacitance: 720 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO247AC

 IRFP3206 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP3206 Datasheet (PDF)

 ..1. Size:297K  international rectifier
irfp3206pbf.pdf

IRFP3206 IRFP3206

PD - 97127IRFP3206PbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.4m:l Uninterruptible Power Supplyl High Speed Power Switching max. 3.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)200A cID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtD

 ..2. Size:297K  infineon
irfp3206pbf.pdf

IRFP3206 IRFP3206

PD - 97127IRFP3206PbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.4m:l Uninterruptible Power Supplyl High Speed Power Switching max. 3.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)200A cID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtD

 ..3. Size:242K  inchange semiconductor
irfp3206.pdf

IRFP3206 IRFP3206

isc N-Channel MOSFET Transistor IRFP3206IIRFP3206FEATURESStatic drain-source on-resistance:RDS(on)3.0mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power SwitchingHard Switc

 7.1. Size:260K  inchange semiconductor
irfp3207z.pdf

IRFP3206 IRFP3206

isc N-Channel MOSFET Transistor IRFP3207ZFEATURESDrain Current I = 170A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 4.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh Speed Power SwitchingHard Switched and High Frequency

 8.1. Size:115K  international rectifier
irfp32n50ks.pdf

IRFP3206 IRFP3206

PD - 94360IRFP32N50KSSMPS MOSFETHEXFET Power MOSFETApplications Switch Mode Power Supply (SMPS)VDSS RDS(on)typ. ID Uninterruptible Power Supply High Speed Power Switching 500V 0.135 32A Hard Switched and High FrequencyCircuitsBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterize

 8.2. Size:202K  international rectifier
irfp32n50kpbf.pdf

IRFP3206 IRFP3206

PD - 95052IRFP32N50KPbFSMPS MOSFETHEXFET Power MOSFETAppIicationsl Switch Mode Power Supply (SMPS)VDSS RDS(on)typ. IDl Uninterruptible Power Supplyl High Speed Power Switching500V 0.135 32Al Hard Switched and High FrequencyCircuitsl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednes

 8.3. Size:94K  international rectifier
irfp32n50k.pdf

IRFP3206 IRFP3206

PD - 94099AIRFP32N50KSMPS MOSFETHEXFET Power MOSFETApplications Switch Mode Power Supply (SMPS)VDSS RDS(on)typ. ID Uninterruptible Power Supply High Speed Power Switching 500V 0.135 32A Hard Switched and High FrequencyCircuitsBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterize

 8.4. Size:175K  vishay
irfp32n50k irfp32n50kpbf sihfp32n50k.pdf

IRFP3206 IRFP3206

IRFP32N50K, SiHFP32N50KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.135RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 190 COMPLIANTRuggednessQgs (nC) 59 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 84and CurrentCon

 8.5. Size:170K  vishay
irfp32n50k sihfp32n50k.pdf

IRFP3206 IRFP3206

IRFP32N50K, SiHFP32N50KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.135RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 190 COMPLIANTRuggednessQgs (nC) 59 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 84and CurrentCon

 8.6. Size:260K  inchange semiconductor
irfp32n50k.pdf

IRFP3206 IRFP3206

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP32N50KFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

Datasheet: IRFP150V , IRFP250M , IRFP250N , IRFP260M , IRFP260N , IRFP2907 , IRFP2907Z , IRFP3077 , 20N60 , IRFP3306 , IRFP3415 , IRFP3703 , IRFP4004 , IRFP4110 , IRFP4227 , IRFP4229 , IRFP4232 .

 

 
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