All MOSFET. IRFP4242 Datasheet

 

IRFP4242 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFP4242
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 430 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 46 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 165 nC
   trⓘ - Rise Time: 71 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.059 Ohm
   Package: TO247AC

 IRFP4242 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP4242 Datasheet (PDF)

 ..1. Size:290K  international rectifier
irfp4242pbf.pdf

IRFP4242 IRFP4242

PD - 96966BIRFP4242PbFPDP MOSFETFeaturesKey Parametersl Advanced process technologyVDS min 300 Vl Key parameters optimized for PDP Sustain & Energy Recovery applicationsVDS (Avalanche) typ. 360 Vl Low EPULSE rating to reduce the powermRDS(ON) typ. @ 10V 49 dissipation in Sustain & ER applicationsIRP max @ TC= 100C 93 Al Low QG for fast responseTJ maxl High re

 8.1. Size:290K  international rectifier
irfp4232pbf.pdf

IRFP4242 IRFP4242

PD - 96965AIRFP4232PbFPDP MOSFETFeaturesKey Parametersl Advanced process technologyVDS min 250 Vl Key parameters optimized for PDP Sustain & Energy Recovery applicationsVDS (Avalanche) typ. 300 Vl Low EPULSE rating to reduce the powermRDS(ON) typ. @ 10V 30 dissipation in Sustain & ER applicationsEPULSE typ. 310 Jl Low QG for fast responseIRP max @ TC= 100Cl

 8.2. Size:301K  international rectifier
irfp4229pbf.pdf

IRFP4242 IRFP4242

PD - 97079BIRFP4229PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS min250 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ.300 Vl Low EPULSE Rating to Reduce PowerRDS(ON) typ. @ 10V m38 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C87 A and Pass Switch Applications

 8.3. Size:300K  international rectifier
irfp4228pbf.pdf

IRFP4242 IRFP4242

PD - 97229AIRFP4228PbFPDP SWITCHFeaturesl Advanced Process Technology Key Parametersl Key Parameters Optimized for PDP VDS min150 V Sustain, Energy Recovery and PassVDS (Avalanche) typ.180 V Switch ApplicationsRDS(ON) typ. @ 10V m12l Low EPULSE Rating to Reduce PowerIRP max @ TC= 100C170 A Dissipation in PDP Sustain, EnergyTJ max175 C Recovery and Pass

 8.4. Size:296K  international rectifier
irfp4227pbf.pdf

IRFP4242 IRFP4242

PD - 97070AIRFP4227PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS max 200 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 240 Vl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 21 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C 130 A and Pass Switch Applications

 8.5. Size:301K  infineon
irfp4229pbf.pdf

IRFP4242 IRFP4242

PD - 97079BIRFP4229PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS min250 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ.300 Vl Low EPULSE Rating to Reduce PowerRDS(ON) typ. @ 10V m38 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C87 A and Pass Switch Applications

 8.6. Size:296K  infineon
irfp4227pbf.pdf

IRFP4242 IRFP4242

PD - 97070AIRFP4227PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS max 200 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 240 Vl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 21 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C 130 A and Pass Switch Applications

 8.7. Size:242K  inchange semiconductor
irfp4229.pdf

IRFP4242 IRFP4242

isc N-Channel MOSFET Transistor IRFP4229IIRFP4229FEATURESStatic drain-source on-resistance:RDS(on)46mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Repetitive Peak Current Capability for Reliable OperationShort fall & Rise Times For Fast SwitchingABSOLUTE MAXIM

 8.8. Size:242K  inchange semiconductor
irfp4227.pdf

IRFP4242 IRFP4242

isc N-Channel MOSFET Transistor IRFP4227IIRFP4227FEATURESStatic drain-source on-resistance:RDS(on)21mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Repetitive Peak Current Capability for Reliable OperationShort fall & Rise Times For Fast SwitchingABSOLUTE MAXIM

 8.9. Size:212K  inchange semiconductor
irfp4227pbf.pdf

IRFP4242 IRFP4242

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFP4227PBFFEATURESWith TO-247 packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top