PD - 96966BIRFP4242PbFPDP MOSFETFeaturesKey Parametersl Advanced process technologyVDS min 300 Vl Key parameters optimized for PDP Sustain & Energy Recovery applicationsVDS (Avalanche) typ. 360 Vl Low EPULSE rating to reduce the powermRDS(ON) typ. @ 10V 49 dissipation in Sustain & ER applicationsIRP max @ TC= 100C 93 Al Low QG for fast responseTJ maxl High re

PD - 96965AIRFP4232PbFPDP MOSFETFeaturesKey Parametersl Advanced process technologyVDS min 250 Vl Key parameters optimized for PDP Sustain & Energy Recovery applicationsVDS (Avalanche) typ. 300 Vl Low EPULSE rating to reduce the powermRDS(ON) typ. @ 10V 30 dissipation in Sustain & ER applicationsEPULSE typ. 310 Jl Low QG for fast responseIRP max @ TC= 100Cl

PD - 97079BIRFP4229PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS min250 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ.300 Vl Low EPULSE Rating to Reduce PowerRDS(ON) typ. @ 10V m38 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C87 A and Pass Switch Applications

PD - 97229AIRFP4228PbFPDP SWITCHFeaturesl Advanced Process Technology Key Parametersl Key Parameters Optimized for PDP VDS min150 V Sustain, Energy Recovery and PassVDS (Avalanche) typ.180 V Switch ApplicationsRDS(ON) typ. @ 10V m12l Low EPULSE Rating to Reduce PowerIRP max @ TC= 100C170 A Dissipation in PDP Sustain, EnergyTJ max175 C Recovery and Pass

PD - 97070AIRFP4227PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS max 200 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 240 Vl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 21 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C 130 A and Pass Switch Applications

isc N-Channel MOSFET Transistor IRFP4229IIRFP4229FEATURESStatic drain-source on-resistance:RDS(on)46mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Repetitive Peak Current Capability for Reliable OperationShort fall & Rise Times For Fast SwitchingABSOLUTE MAXIM

isc N-Channel MOSFET Transistor IRFP4227IIRFP4227FEATURESStatic drain-source on-resistance:RDS(on)21mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Repetitive Peak Current Capability for Reliable OperationShort fall & Rise Times For Fast SwitchingABSOLUTE MAXIM

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFP4227PBFFEATURESWith TO-247 packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)