BF992R Datasheet and Replacement
Type Designator: BF992R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.04 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 4 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm
Package: SOT143R
BF992R substitution
BF992R Datasheet (PDF)
bf992 bf992r 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF992; BF992RSilicon N-channel dual-gateMOS-FETsProduct specification 1996 Jul 30Supersedes data of April 1991File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationSilicon N-channel dual-gate MOS-FETs BF992; BF992RAPPLICATIONShandbook, halfpaged VHF applications such as VHF television tuners and FM4 3
bf992 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D071BF992Silicon N-channel dual gateMOS-FETProduct specification 1999 Aug 11Supersedes data of 1996 Jul 30Philips Semiconductors Product specificationSilicon N-channel dual gate MOS-FET BF992APPLICATIONS PINNING VHF applications such as VHF television tuners and FMPIN SYMBOL DESCRIPTIONtuners with 12 V supply voltage. The device i
Datasheet: BF982 , BF988 , BF989 , BF989S , BF990 , BF990A , BF991 , BF992 , AON7403 , BF993 , BF994 , BF994S , BF994SR , BF995 , BF996 , BF996S , BF996SR .
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