IRFSL3806
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFSL3806
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 71
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 43
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 22
nC
trⓘ - Rise Time: 40
nS
Cossⓘ -
Output Capacitance: 130
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0158
Ohm
Package:
TO262
IRFSL3806
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFSL3806
Datasheet (PDF)
..1. Size:564K international rectifier
irfb3806pbf irfs3806pbf irfsl3806pbf.pdf
PD - 97310IRFB3806PbFIRFS3806PbFApplicationsIRFSL3806PbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power SwitchingDVDSS60Vl Hard Switched and High Frequency CircuitsRDS(on) typ. 12.6mGmax. 15.8mBenefitsID 43ASl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully C
..2. Size:564K infineon
irfb3806pbf irfs3806pbf irfsl3806pbf.pdf
PD - 97310IRFB3806PbFIRFS3806PbFApplicationsIRFSL3806PbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power SwitchingDVDSS60Vl Hard Switched and High Frequency CircuitsRDS(on) typ. 12.6mGmax. 15.8mBenefitsID 43ASl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully C
7.1. Size:715K international rectifier
irfsl38n20dpbf.pdf
PD - 97001APROVISIONALIRFB38N20DPbF IRFS38N20DPbFSMPS MOSFET IRFSL38N20DPbFHEXFET Power MOSFETApplicationsl High frequency DC-DC converters Key Parametersl Plasma Display PanelVDS200 Vl Lead-FreeVDS (Avalanche) min.260 VRDS(ON) max @ 10V m54BenefitsTJ max175 Cl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance Inc
7.2. Size:583K infineon
irfb38n20dpbf irfs38n20dpbf irfsl38n20dpbf.pdf
IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET Key Parameters Applications High frequency DC-DC converters VDS 200 V Plasma Display Panel VDS(Avalanche) min. 260 VRDS(on) max @ 10V 54 mBenefits TJ max 175 C Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS D D D
7.3. Size:256K inchange semiconductor
irfsl38n20d.pdf
Isc N-Channel MOSFET Transistor IRFS38N20DFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 2
Datasheet: WPB4002
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